Preparation and characterization of cost effective spray pyrolyzed absorber layer for thin film solar cells

Sankır, Nurdan Demirci; Aydın, Erkan; Unver, Hulya; Uluer, Ezgi; Parlak, M.

doi:10.1016/j.solener.2013.05.024

Cited by 24 publications

(9 citation statements)

References 33 publications

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“…XRD analysis of stepwise annealed NiO x films (from 100 to 700 °C, 100 °C steps, on quartz substrates) demonstrated that sputtered NiO x does not exhibit evolution of any significant peak, even after annealing at high temperatures (Figure S1), which confirms the limited effect of annealing on the crystallite size. The crystallite sizes ( D ) of the NiO x films are calculated to be 9.9 nm for as-deposited NiO x following the Scherrer formula, which is consistent with an average crystallite size of 8–9 nm as determined by AFM analysis (Figure S2).…”

supporting

confidence: 77%

Room-Temperature-Sputtered Nanocrystalline Nickel Oxide as Hole Transport Layer for p–i–n Perovskite Solar Cells

Aydın

Troughton

Bastiani

et al. 2018

ACS Appl. Energy Mater.

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104

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Nickel oxide (NiO x) is a promising hole transport layer (HTL) for perovskite solar cells (PSCs), as it combines good chemical stability, high broadband optical transparency and a high work function. Excellent power conversion efficiencies (PCE) have already been reported using solution-processed NiO x. However, solution-based techniques usually require high-temperature post-annealing to achieve the required HTL properties of NiO x , which jeopardizes its use for many applications, such as monolithic tandem solar cells. To resolve this issue, we developed room-temperature sputtered NiO x and demonstrated p−i−n PSCs with 17.6% PCE (with negligible hysteresis), which is comparable to the best PSCs using sputtered and annealed NiO x without heteroatom doping. Through detailed characterization and density functional theory (DFT) analysis, we explored the electrical and optical properties of the obtained NiO x films and find that they are strongly linked with the specific defect chemistry of this material. Finally, in view of its use in perovskite/silicon tandem solar cells, we find that direct sputtering on randompyramid textured silicon wafers results in highly conformal NiO x films.

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supporting

confidence: 77%

Room-Temperature-Sputtered Nanocrystalline Nickel Oxide as Hole Transport Layer for p–i–n Perovskite Solar Cells

Aydın

Troughton

Bastiani

et al. 2018

ACS Appl. Energy Mater.

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104

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“…This study reports the system built up by incorporating a photoelectrochemical cell into a VR-flow battery to investigate the activity of the hybrid TiO 2 –In 2 S 3 photoelectrode materials for the very first time. In 2 S 3 thin films have been deposited on the glass substrates using ultrasonic spray pyrolysis (USP) system, as reported in our previous study . The thickness of the thin film photoelectrodes has been monitored by altering the pass number of the nozzle from 25-pass (25P) to 75-pass (75P) by delivering 6 μL·cm –2 precursor solution in each pass number.…”

supporting

confidence: 54%

“…In 2 S 3 thin films have been deposited on the glass substrates using ultrasonic spray pyrolysis (USP) system, as reported in our previous study. 17 material characterizations of the thin-film photoelectrodes have been given in the Supporting Information (Figures S1 and S2).…”

mentioning

confidence: 99%

Indium Sulfide Based Photoelectrodes for All-Vanadium Photoelectrochemical Redox Flow Batteries

Kumtepe

Altaf

Sahsuvar

et al. 2020

ACS Appl. Energy Mater.

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The utilization of indium sulfide (In 2 S 3 ) photoelectrodes in an all-vanadium photoelectrochemical redox flow battery system has been investigated. The In 2 S 3 -based photoelectrodes have been prepared via the ultrasonic spray pyrolysis (USP) method. The thickness of the In 2 S 3 photoelectrodes has been altered via increasing the pass number of the USP nozzle from 25 to 75 passes. Each pass delivers 6 μL•cm −2 of the precursor solution. Within the scope of the photoelectrochemical oxidation on the In 2 S 3 , the vanadium couples of VO 2+ /V 3+ have been proven to be promising redox species. The maximum charge separation and quantum efficiencies of 46% and 20% have been calculated, respectively.

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“…The estimated crystallite size from X-ray diffraction values lies in the range of 10 -9 m and hence the relation L D > D holds good and indicates that no grain boundary scattering results in better charge transport. The change in carrier concentration and mobility values with the solvent volume does not arise due to the grain boundary scattering but only due to a small deviations as observed from EDS results which is proposed by Sankir et al[40].…”

supporting

confidence: 50%

Facile preparation of hierarchical nanostructured CuInS₂ counter electrodes for dye-sensitized solar cells

Dhas¹,

Christy²,

Venkatesh³

et al. 2017

Mater. Res. Express

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CuInS 2 (CIS) thin films have been synthesized onto the glass substrates for different solvent volumes (10, 30, 50 and 70 ml) by nebulizer spray technique. The effect of solvent volume on the structural, morphological, compositional, optical and electrical properties of CIS thin films has been investigated. X-ray diffraction patterns suggest that the obtained CIS films are polycrystalline with the tetragonal structure. The surface morphology of the prepared CIS films purely depends on the solvent volume. The elemental quantitative investigation and the stoichiometric ratio of the CIS thin films were verified from XPS and EDS. High absorbance with the optical band gap of 1.13 eV was obtained at the higher solvent volume. All the deposited CIS thin films exhibited p-type semiconducting behavior with the high electrical conductivity and carrier concentration. CIS thin films deposited onto the FTO substrate were used as a counter electrode (CE) in dye-sensitized solar cells. CIS CEs possessed high electrocatalytic behavior and fast electron charge transfer at the CE/electrolyte interface. The CIS CE prepared using 50 ml solvent volume generated high energy conversion efficiency of about 3.25 %.

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Preparation and characterization of cost effective spray pyrolyzed absorber layer for thin film solar cells

Cited by 24 publications

References 33 publications

Room-Temperature-Sputtered Nanocrystalline Nickel Oxide as Hole Transport Layer for p–i–n Perovskite Solar Cells

Room-Temperature-Sputtered Nanocrystalline Nickel Oxide as Hole Transport Layer for p–i–n Perovskite Solar Cells

Indium Sulfide Based Photoelectrodes for All-Vanadium Photoelectrochemical Redox Flow Batteries

Facile preparation of hierarchical nanostructured CuInS₂ counter electrodes for dye-sensitized solar cells

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Preparation and characterization of cost effective spray pyrolyzed absorber layer for thin film solar cells

Cited by 24 publications

References 33 publications

Room-Temperature-Sputtered Nanocrystalline Nickel Oxide as Hole Transport Layer for p–i–n Perovskite Solar Cells

Room-Temperature-Sputtered Nanocrystalline Nickel Oxide as Hole Transport Layer for p–i–n Perovskite Solar Cells

Indium Sulfide Based Photoelectrodes for All-Vanadium Photoelectrochemical Redox Flow Batteries

Facile preparation of hierarchical nanostructured CuInS2 counter electrodes for dye-sensitized solar cells

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Facile preparation of hierarchical nanostructured CuInS₂ counter electrodes for dye-sensitized solar cells