2017
DOI: 10.1038/s41598-017-17432-9
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Growth of Graphene/h-BN Heterostructures on Recyclable Pt Foils by One-Batch Chemical Vapor Deposition

Abstract: High-quality large-area graphene/h-BN vertical heterostructures are promising building blocks for many viable applications such as energy harvesting/conversion, electronics and optoelectronics. Here, we successfully grew high-quality large-area graphene/h-BN vertical heterostructures on Pt foils by one-batch low-pressure chemical vapor deposition (LPCVD). We obtained the high quality of about 200-µm-wide graphene/h-BN film having uniform layer thickness. Moreover, the obtained graphene/h-BN heterostructures ex… Show more

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Cited by 20 publications
(13 citation statements)
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“…The layers of GR can be determined by observing the ratio of the intensity of the G peak (1600 cm –1 ) to 2D peak (2700 cm –1 ) in Raman spectra. As shown in Figure S3e, the intensity of the 2D peak over G peak ratio is less than 1, indicating the successful fabrication of multilayer GR. Meanwhile, the TEM image (Figure S3f) further confirms our claim of multilayer GR. The AFM images (Figure S3g) and the corresponding height profile in the inset suggest that the thickness of commercial GR is a two-dimensional material with a thickness of 6 nm.…”
supporting
confidence: 61%
“…The layers of GR can be determined by observing the ratio of the intensity of the G peak (1600 cm –1 ) to 2D peak (2700 cm –1 ) in Raman spectra. As shown in Figure S3e, the intensity of the 2D peak over G peak ratio is less than 1, indicating the successful fabrication of multilayer GR. Meanwhile, the TEM image (Figure S3f) further confirms our claim of multilayer GR. The AFM images (Figure S3g) and the corresponding height profile in the inset suggest that the thickness of commercial GR is a two-dimensional material with a thickness of 6 nm.…”
supporting
confidence: 61%
“…Notable steps forward have been made in the growth of graphene on metals and on silicon carbide (SiC), although it is more difficult to exploit the latter process for NVM applications due to its ultimate size limitations and inability to be integrated in a Si‐flow process. Progress is also reported on the growth of h‐BN and TMD materials. However, the growth of large‐area monolayer or few‐layer single crystals of h‐BN and TMDs is still a major challenge that will require continued significant research efforts.…”
Section: D Materials: Production and Processingmentioning
confidence: 99%
“…However, this can be further improved by incorporating h-BN as a supporting layer during this direct CVD growth of bilayer graphene. 54,55 2.3. Large-Area Growth of Bilayer Graphene on Wafer.…”
Section: Resultsmentioning
confidence: 99%
“…Apart from that, the charge scatterings from the surface of the SiO 2 layer may also contribute to the low values of carrier mobility. However, this can be further improved by incorporating h -BN as a supporting layer during this direct CVD growth of bilayer graphene. , …”
Section: Resultsmentioning
confidence: 99%