Growth of heavily doped monocrystalline and polycrystalline SiGe-based quantum dot superlattices

Hauser, David; Savelli, G.; Plissonnier, M.; Montès, L.; Simon, Julia

doi:10.1016/j.tsf.2012.02.022

Cited by 11 publications

(5 citation statements)

References 14 publications

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“…Experimentally, it may prove difficult to embed such nanoparticles into a SiGe matrix, because Si and Ge are fully miscible. Although high-concentration Ge nanoparticles with flat pyramidal or hemispherical shapes have been grown inside a Si 25 and SiGe matrix 26 in the past, for the sake of clarity we have avoided introducing any experimentally determined morphological characteristics in our calculation.…”

Section: Resultsmentioning

confidence: 99%

Role of light and heavy embedded nanoparticles on the thermal conductivity of SiGe alloys

et al. 2011

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We have used an atomistic ab initio approach with no adjustable parameters to compute the lattice thermal conductivity of Si 0.5 Ge 0.5 with a low concentration of embedded Si or Ge nanoparticles of diameters up to 4.4 nm. Through exact Green's function calculation of the nanoparticle scattering rates, we find that embedding Ge nanoparticles in Si 0.5 Ge 0.5 provides 20% lower thermal conductivities than embedding Si nanoparticles. This contrasts with the Born approximation, which predicts an equal amount of reduction for the two cases, irrespective of the sign of the mass difference. Despite these differences, we find that the Born approximation still performs remarkably well, and it permits investigation of larger nanoparticle sizes, up to 60 nm in diameter, not feasible with the exact approach.

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Section: Resultsmentioning

confidence: 99%

Role of light and heavy embedded nanoparticles on the thermal conductivity of SiGe alloys

et al. 2011

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“…109 Based upon the forgoing there are several areas that will benefit from future research: (1) it is important to determine what the inherent doping of NCs are as a function of synthetic methods, this is particularly true for solution routes; (2) where dopants are present within the crystal lattice (c-type) is the distribution between individual NCs uniform, and if not does this matter with regard to device performance; (3) if doping occurs with matrix (m-type) what levels and distribution is needed to provide effective doping? Finally, it is worth noting that while extensive studies on silicon NCs have been reported, there is only a few studies on their germanium analogues, [110][111][112][113][114] and there is insufficient work to determine whether similar approaches can be applied. However, this represents an interesting area of future research.…”

Section: Conclusion and The Futurementioning

confidence: 99%

Doping silicon nanocrystals and quantum dots

2016

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The ability to incorporate a dopant element into silicon nanocrystals (NC) and quantum dots (QD) is one of the key technical challenges for the use of these materials in a number of optoelectronic applications. Unlike doping of traditional bulk semiconductor materials, the location of the doping element can be either within the crystal lattice (c-doping), on the surface (s-doping) or within the surrounding matrix (m-doping). A review of the various synthetic strategies for doping silicon NCs and QDs is presented, concentrating on the efficacy of the synthetic routes, both in situ and post synthesis, with regard to the structural location of the dopant and the doping level. Methods that have been applied to the characterization of doped NCs and QDs are summarized with regard to the information that is obtained, in particular to provide researchers with a guide to the suitable techniques for determining dopant concentration and location, as well as electronic and photonic effectiveness of the dopant.

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“…This technique has already been used to successfully grow nanostructured silicon-based thin films [4,13,14].…”

Section: Qdsl Growth Mechanismmentioning

confidence: 99%

Titanium-based silicide quantum dot superlattices for thermoelectrics applications

et al. 2015

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Ti-based silicide quantum dot superlattices (QDSLs) are grown by reduced-pressure chemical vapor deposition. They are made of titanium-based silicide nanodots scattered in an n-doped SiGe matrix. This is the first time that such nanostructured materials have been grown in both monocrystalline and polycrystalline QDSLs. We studied their crystallographic structures and chemical properties, as well as the size and the density of the quantum dots. The thermoelectric properties of the QDSLs are measured and compared to equivalent SiGe thin films to evaluate the influence of the nanodots. Our studies revealed an increase in their thermoelectric properties-specifically, up to a trifold increase in the power factor, with a decrease in the thermal conductivity-making them very good candidates for further thermoelectric applications in cooling or energy-harvesting fields.

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Growth of heavily doped monocrystalline and polycrystalline SiGe-based quantum dot superlattices

Cited by 11 publications

References 14 publications

Role of light and heavy embedded nanoparticles on the thermal conductivity of SiGe alloys

Role of light and heavy embedded nanoparticles on the thermal conductivity of SiGe alloys

Doping silicon nanocrystals and quantum dots

Titanium-based silicide quantum dot superlattices for thermoelectrics applications

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