Growth of heavy ion-induced nanodots at the SiO2–Si interface: Correlation with ultrathin gate oxide reliability

Single-Event Effects in CMOS Image Sensors

“…Yet all timing cases must be considered to obtain a full list of possible events. The sensor works in [13], [14] rolling shutter mode with a total readout time of 9.17ms; which means that each line is read and initialized successively. Command signals are first sent to all the pixels of the line: signal sampling, reset and reference sampling (Non-Correlated Double Sampling).…”

Discontinuous ion tracks on silicon oxide on silicon surfaces after grazing-angle heavy ion irradiation

“…At this point, the diameter of the track induced by a single swift heavy ion is of the same size as the geometrical features of advanced metal-oxide-semiconductor ͑MOS͒ devices. 13 In both of those fields, studying the phenomenology of fast heavy ion interaction with matter is a crucial point, even more at the nanometric scale.…”

“…The morphology of the surface track actually depends on the ion energy as well as the physical properties of the irradiated material. 1,11,13,20 In most of the studies reported in the literature, the electronic linear energy transfer ͑LET elec ͒ is defined as the main parameter to quantify the degradation that occurs during swift heavy ion irradiation.…”

Impact of Radiation on the Operation and Reliability of Deep Submicron CMOS Technologies

“…Besides topographical information, one can also obtain electrical information, using conductive-mode AFM, directly on the ion spot [27]. In this way, also the presence of ion tracks on the surface of SiO 2 has been investigated [28][29][30]. In combination with HF etching, it was demonstrated that an ion track gives rise to a nanodot near the surface, below which silicon bumps at the Si-SiO 2 interface are found [29].…”