Growth of Hg1−Cd Te epitaxial layers on (100) CdTe by chemical vapor transport under normal and reduced gravity conditions

Developments in Measuring and Calculating Chemical Vapor Transport Phenomena Demonstrated on Cr, Mo, W, and Their Compounds

“…210 The growth of crystals and epitaxial layers is influenced by convection, too. Investigations of the effects on the morphology of crystals and layers grown by chemical transport reactions under the influence of convection are reported in the transport systems GaAs/GaI 3 , 211 GeSe/GeI 4 , 212,213 Hg 1-x Cd x Te/ HgI 2 , [214][215][216][217][218] GeSe/I 2 , 219 GeSe 2 /I 2 , 219 GeTe/I 2 , 219 GeTe/ GeI 4 , 213 ZnTe/I 2 , 220 MnSe/CdSe/I 2 , 221 GeSe 0.99 Te 0.01 / GeI 4 , 122 GeSe 0.98 Te 0.02 /GeCl 4 , 122 and GeS/GeCl 4 /Ar. 122 A more general theoretical treatment of convection is given by Carruthers, 222,223 Launay and Roux, 224 Reed et al, 209 and Rosenberger et al [225][226][227][228][229][230] There is only one attempt at a detailed analysis of convective flow given by Klosse and Ullersma 231 (KU model).…”

“…The growth of crystals and epitaxial layers is influenced by convection, too. Investigations of the effects on the morphology of crystals and layers grown by chemical transport reactions under the influence of convection are reported in the transport systems GaAs/GaI 3 , GeSe/GeI 4 , , Hg 1 - x Cd x Te/HgI 2 , − GeSe/I 2 , GeSe 2 /I 2 , GeTe/I 2 , GeTe/GeI 4 , ZnTe/I 2 , MnSe/CdSe/I 2 , GeSe 0.99 Te 0.01 /GeI 4 , GeSe 0.98 Te 0.02 /GeCl 4 , and GeS/GeCl 4 /Ar …”

The Temperature-Composition Phase Equilibria in the Hg0.8Cd0.2Te-HgI2 Pseudobinary SystemBased on part of a thesis to be submitted by M. A. Hutchins to the Graduate School of Rensselaer Polytechnic Institute in partial fulfillment of the requirements for a Ph.D. degree.Dedicated to Professor Welf Bronger on the Occasion of his 70th Birthday

“…The corresponding partial pressures of Cd(g) and Te 2 (g) are several orders of magnitude lower than that of Hg(g) at temperatures between about 500°C and the melting point [4]. More recently, Hg 1Ϫx Cd x Te epitaxial layers of very high chemical and structural microhomogeneity have been grown in a reduced gravity environment [11,12]. Other vapor growth methods such as molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) involve rather complex facilities.…”