Growth of HgCdTe and other Hg-based films and multilayers by molecular beam epitaxy

Abstract

A molecular beam epitaxy (MBE) system specifically designed for growing Hg-based films and multilayer structures is described. It consists of a preparation and analysis chamber, a main MBE chamber equipped with a refillable Hg source, and a load lock for introducing and retrieving samples from either chamber. The system has been used to grow CdTe, HgCdTe, and HgTe films as well as HgTe–CdTe superlattices. The optical, electrical, and structural properties of the films and multilayers are discussed.

Characterization of HgCdTe Epilayers and HgTe-CdTe Superlattice Structures Grown by Molecular Beam Epitaxy

“…The system has been extensively described elsewhere [1]. Hg 1 -,Cd 0 Te epilayers were grown on (1OO)Cd 0 .…”