Growth of high-homogeneity GaSb:Te crystals for thermophotovoltaic energy converters

Serebryakov, Yu. A.; Sidorov, V. S.; Прохоров, И. В.; Коробейникова, Э. Н.; Vlasov, V. N.; Artem’ev, V. K.; Folomeev, V.I.; Shul’pina, I. L.; Pakhanov, N. A.

doi:10.1134/s1027451014040144

Cited by 3 publications

(3 citation statements)

References 15 publications

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“…Further, these results were confirmed for other semiconductor crystals of GaSb(Si) (Prokhorov, Serebryakov et al, 2008;Serebryakov et al, 2007) and GaSb(Te) (Serebryakov et al, 2012(Serebryakov et al, , 2014 and used for elaborating terrestrial technologies for more perfect crystal growth.…”

Section: Characterization Of Crystals Grown During Physical Modellingsupporting

confidence: 57%

“…On substrates from the GaSb(Te) crystals with increased homogeneity, high-efficiency thermophotovoltaic converters were created by the diffusion technique. In work by Serebryakov et al (2014) it was shown that the characteristics of these devices (efficiency, short-circuit current, open-circuit voltage etc.) exceed the analogous characteristics of other samples.…”

Section: Further Experiments and Investigationsmentioning

confidence: 99%

“…In this work, the authors' experience of the use of XRDI is reported for investigations of crystals grown during space flights on Soviet and Russian space vehicles, and also their terrestrial analogues, starting with the Apollo-Soyuz programme (1975). Subsequently, the authors investigated crystals of the solid solution Ge-Si-Sb (Ivanov et al, 1979;Zemskov et al 1977Zemskov et al , 1979Zemskov et al , 1984, InSb(Te) (Shul'pina et al, 1981), Ge(In) (Calzadilla et al, 1991), Ge(Ga) (Prokhorov et al, 2005, Te (Parfen'ev et al, 2000(Parfen'ev et al, , 2004, GaSb(Si) (Prokhorov, Serebryakov et al, 2008;Serebryakov et al, 2007) and GaSb(Te) (Serebryakov et al, 2012(Serebryakov et al, , 2014, partially or completely recrystallized under space and terrestrial conditions by the method of directional crystallization (Bridgman). The majority of these works were performed in the former USSR and in Russia and are not familiar abroad, so the goal of this paper is to familiarize researchers with the results obtained by XRDI.…”

Section: Introductionmentioning

confidence: 99%

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Application of X-ray topography to USSR and Russian space materials science

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The authors' experience of the application of X-ray diffraction imaging in carrying out space technological experiments on semiconductor crystal growth for the former USSR and for Russia is reported, from the Apollo-Soyuz programme (1975) up to the present day. X-ray topography was applied to examine defects in crystals in order to obtain information on the crystallization conditions and also on their changes under the influence of factors of orbital flight in space vehicles. The data obtained have promoted a deeper understanding of the conditions and mechanisms of crystallization under both microgravity and terrestrial conditions, and have enabled the elaboration of terrestrial methods of highly perfect crystal growth. The use of X-ray topography in space materials science has enriched its methods in the field of digital image processing of growth striations and expanded its possibilities in investigating the inhomogeneity of crystals.

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Section: Characterization Of Crystals Grown During Physical Modellingsupporting

confidence: 57%

Section: Further Experiments and Investigationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Application of X-ray topography to USSR and Russian space materials science

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et al. 2016

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Kinetic block model of crystal–mother‐phase interface with preferential clustering ‐ single layer case

Izdebski

Włodarska

2015

Crystal Research and Technology

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A new single-layer kinetic block model of crystal growth is proposed, which takes into account preference for bonds between blocks of the same type over mixed-type bonds. The obtained parameters describing stable growth conditions were compared with other theoretical models (such as thermodynamic Jackson model and the earlier proposed kinetic model based on zeroth order approximation) which assume that new growth units are attached in a completely random way. Additionally, the results were compared with Monte Carlo simulations. The proposed model produced results which matched the simulation results much better than the other theoretical models. The new model can be used for studying crystal growth both from solution and from vapour. Calculations based on this model show that the number of created mixed-type bonds depends on the temperature and is lower from its estimation obtained with the use of the zeroth order (Bragg-Williams) approximation.

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Results of the Experiments on the Crystallization of a Ge–Si–Sb Solid Solution under the Conditions of Microgravity on the Soyuz–Apollo Spacecraft

Shul’pina

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2019

Phys. Solid State

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Growth of high-homogeneity GaSb:Te crystals for thermophotovoltaic energy converters

Cited by 3 publications

References 15 publications

Application of X-ray topography to USSR and Russian space materials science

Application of X-ray topography to USSR and Russian space materials science

Kinetic block model of crystal–mother‐phase interface with preferential clustering ‐ single layer case

Results of the Experiments on the Crystallization of a Ge–Si–Sb Solid Solution under the Conditions of Microgravity on the Soyuz–Apollo Spacecraft

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