Growth of High Mobility InN Film on Ga‐Polar GaN Substrate by Molecular Beam Epitaxy for Optoelectronic Device Applications

Abstract

The fabrication of high‐speed electronic and communication devices has rapidly grown the demand for high mobility semiconductors. However, their high cost and complex fabrication process make them less attractive for the consumer market and industrial applications. Indium nitride (InN) can be a potential candidate to fulfill industrial requirements due to simple and low‐cost fabrication process as well as unique electronic properties such as narrow direct bandgap and high electron mobility. In this work, 3 µm thick InN epilayer is grown on (0001) gallium nitride (GaN)/Sapphire template under In‐rich conditions with different In/N flux ratios by molecular beam epitaxy. The sharp InN/GaN interface monolayers with the In‐polar growth are observed, which assure the precise control of the growth parameters. The directly probed electron mobility of 3610 cm2 V‐1 s‐1 is measured with an unintentionally doped electron density of 2.24 × 1017 cm‐3. The screw dislocation and edge dislocation densities are calculated to be 2.56 × 108 and 0.92 × 1010 cm‐2, respectively. The step‐flow growth with the average surface roughness of 0.23 nm for 1 × 1 µm2 is confirmed. The high quality and high mobility InN film make it a potential candidate for high‐speed electronic/optoelectronic devices.

Ultrasensitive and Self‐Powered SnSe/Ge Heterojunction Photodetector Driven by Spontaneously Interfacial Excitation Transfer of Carriers

“…All their output curves show the linear symmetry characteristics in the first and third quadrants, which exhibits the obvious Ohmic contact behavior. [51,54] Therefore, profit from the work function of ≈4.20 eV of In-Ga alloy, the photogenerated electrons can be guided effectively out of Ge crystal. Similarly, the photogenerated holes can be rapidly extracted to the Cu electrode from the SnSe film, due to the appropriate work function of ≈4.65 eV of Cu.…”

“…Theoretically, by means of measuring current noise power spectrum from the SnSe/Ge device and then calculating the noise equivalent power NEP, the calculated values of the detectivity D* could become more precise. [50][51][52][53][54][55] However, limited to the present experimental conditions, we chose to calculate the values of the detectivity D* by using of the most used formula of (2 )…”

“…Theoretically, by means of measuring current noise power spectrum from the SnSe/Ge device and then calculating the noise equivalent power NEP, the calculated values of the detectivity D* could become more precise. [ 50–55 ] However, limited to the present experimental conditions, we chose to calculate the values of the detectivity D* by using of the most used formula of $${D^ * } = \frac{{{A^{1/2}}R}}{{{{(2e{I_{{\rm{dark}}}})}^{1/2}}}}$$. [ 61–63 ] Although there are some errors inside the estimated values of the detectivity D* , it can still quantitatively reflect the superior performance of the SnSe/Ge heterojunction device.…”

Band-engineered dual-band visible and short-wave infrared photodetector with metal chalcogenide colloidal quantum dots

“…Emerging materials, such as III-nitride-based semiconducting materials, two-dimensional materials, organic materials, and perovskite materials, have received a lot of attention in recent years. [9][10][11][12][13][14][15][16][17][18][19] Among the III-nitride family, InN materials are attractive for optoelectronic device applications due to their suitable bandgap and high electron mobility. 19 Ali et al fabricated the high-quality InN/GaN heterointerface and obtained high-performance broadband PDs.…”

“…[9][10][11][12][13][14][15][16][17][18][19] Among the III-nitride family, InN materials are attractive for optoelectronic device applications due to their suitable bandgap and high electron mobility. 19 Ali et al fabricated the high-quality InN/GaN heterointerface and obtained high-performance broadband PDs. 17 Two-dimensional materials with excellent transparency, extraordinary flexibility, high conductivity, and direct bandgaps have been successfully used not only as electrodes but also as active layers in optoelectronic devices.…”