Growth of high quality, epitaxial InSb nanowires

Park, Hyun D.; Prokes, S. M.; Twigg, M. E.; Ding, Y.; Wang, Zhong Lin

doi:10.1016/j.jcrysgro.2007.03.023

Cited by 55 publications

(46 citation statements)

References 16 publications

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“…III-V compound semiconductors are promising thermoelectric materials because they offer several advantages such as high mobility, reduced thermal conductivity by alloying, and established pathways toward composing low-dimensional structures and nanocomposites. [2][3][4][5][6] In early research on III-V semiconductors for thermoelectric applications, narrow band-gap materials with light electron effective masses such as InAs and InSb were studied because of their relatively high ZT's with high electron mobility. 7,8 Recently Mingo calculated the figure of merits of various nanowires ͑NWs͒ made of III-V semiconductors based on the exact solution of the Boltzmann transport equation and predicted that ZT can be much higher than unity at room temperature for ultrathin NWs such as InSb NWs thinner than 15 nm and InAs NWs thinner than 5 nm in diameter.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric figure of merit of(In0.53Ga0.47As)0.8<

et al. 2010

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The thermoelectric figure of merit is measured and theoretically analyzed for n-type Si-doped InGaAlAs III-V quaternary alloys at high temperatures. The Seebeck coefficient, electrical conductivity, and thermal conductivity of a Si-doped ͑In 0.53 Ga 0.47 As͒ 0.8 ͑In 0.52 Al 0.48 As͒ 0.2 of 2 m thickness lattice matched to InP substrate grown by molecular-beam epitaxy are measured up to 800 K. The measurement results are analyzed using the Boltzmann transport theory based on the relaxation-time approximation and the theoretical calculation is extended to find optimal carrier densities that maximize the figure of merit at various temperatures. The figure of merit of 0.9 at 800 K is measured at a doping level of 1.9ϫ 10 18 cm −3 and the theoretical prediction shows that the figure of merit can reach 1.3 at 1000 K at a doping level of 1.5ϫ 10 18 cm −3 .

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Section: Introductionmentioning

confidence: 99%

Thermoelectric figure of merit of(In0.53Ga0.47As)0.8<

et al. 2010

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“…[18][19][20] Despite these attractive properties, advanced development in InSb-based technology has been diffi cult because of a lack of semi-insulating, lattice-matched substrates, and convoluted epitaxial constraints. InSb NPs have been grown using Au-assisted chemical beam epitaxy, [ 22,23 ] Au-catalyzed metal-organic chemical vapor deposition (MOCVD), [24][25][26] thermal CVD, [ 27 ] electrodeposition in porous templates, [ 28 ] and self-nucleation. [ 3,21 ] This advancement opens the door for heterogeneous integration of high-performance InSb NP devices on cheaper and more readily available platforms.…”

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confidence: 99%

“…InSb NPs have been grown using Au-assisted chemical beam epitaxy, [ 22,23 ] Au-catalyzed metal-organic chemical vapor deposition (MOCVD), [24][25][26] thermal CVD, [ 27 ] electrodeposition in porous templates, [ 28 ] and self-nucleation. InSb NPs have been grown using Au-assisted chemical beam epitaxy, [ 22,23 ] Au-catalyzed metal-organic chemical vapor deposition (MOCVD), [24][25][26] thermal CVD, [ 27 ] electrodeposition in porous templates, [ 28 ] and self-nucleation.…”

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confidence: 99%

Tuning the Au‐Free InSb Nanocrystal Morphologies Grown by Patterned Metal–Organic Chemical Vapor Deposition

Lin

Shapiro

Eisele

et al. 2014

Adv Funct Materials

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4311www.MaterialsViews.com wileyonlinelibrary.com quantum physical phenomena and spinorbit systems. [18][19][20] Despite these attractive properties, advanced development in InSb-based technology has been diffi cult because of a lack of semi-insulating, lattice-matched substrates, and convoluted epitaxial constraints. Recent progress in nano-heteroepitaxy, however, has enabled high-quality III-V NPs to form on highly lattice-mismatched substrates. [ 3,21 ] This advancement opens the door for heterogeneous integration of high-performance InSb NP devices on cheaper and more readily available platforms.Exploration of InSb in the NP community is a growing research interest, with the fi rst reports appearing in 2005. InSb NPs have been grown using Au-assisted chemical beam epitaxy, [ 22,23 ] Au-catalyzed metal-organic chemical vapor deposition (MOCVD), [24][25][26] thermal CVD, [ 27 ] electrodeposition in porous templates, [ 28 ] and self-nucleation. [ 29 ] Almost all recently published methods are based on epitaxial techniques that generally use Au catalysts and an initial formation of InAs NP segments to assist the InSb NP formation. However, there has been evidence of Au atom contamination in the NPs using Au-catalyzed growth [ 30 ] ; Au is known to create recombination centers in III-V semiconductors. This can signifi cantly reduce the minority carrier lifetime and increase scattering, therefore hampering the device performance. Moreover, the necessity of using short InAs segments to assist InSb NP formation can further complicate practical device fabrication because of the large band-offset and type-III, broken-gap band alignment between InAs and InSb. [ 31 ] In this work, we provide a thorough study of direct InSb nanostructure formation on patterned InAs (111)B substrates, by MOCVD, without the use of Au catalysts and short InAs segments. We investigate various growth conditions that result in different types of InSb nanostructures, including the conditions required to achieve vertical NP growth. Our observations are then explained by fi rst-principles calculations using density-function theory (DFT). This paper provides a basic ground work for potential optoelectronic and electronic devices based on Au-free InSb NPs. MethodsInSb nanostructures are grown on patterned InAs (111)B substrates with a low-pressure (60 torr) vertical Emcore MOCVD reactor, using trimethylindium (TMIn) and trimethylantimony (TMSb) as precursors. The InAs substrates are patterned with A thorough study of direct InSb nanocrystal formations on patterned InAs (111)B substrates is provided. These nanostructures are created without the use of Au catalysts or initial InAs segments. Under the growth conditions generally used for selective-area, catalyst-free epitaxy, a wide range of InSb nanocrystal morphologies are observed. This is because the low-energy InSb surfaces, studied by fi rst-principles calculations, are the {111} facets as opposed to the {110} facets. By controlling the V/III ratio during growth, different InSb nanostructures can...

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“…6-9 Many groups have reported electrochemical growth of polycrystalline nanowires, 10-13 but only little work has been done on the synthesis and characterizations of single crystalline InSb nanomaterials, [14][15][16][17] and a comprehensive transport studies on single nanowire is still lacking. In this paper, we analyze and present how single crystalline InSb nanowires can be synthesized via pulse-laser chemical vapor deposition method.…”

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confidence: 99%