Growth of high-quality GaN on Si(111) substrate by ultrahigh vacuum chemical vapor deposition

Abstract

An ultrahigh vacuum chemical vapor deposition (UHVCVD) system was employed to grow high-quality GaN on a Si (111) substrate using a thin AlN buffer layer. X-ray diffraction, high-resolution electron microscopy (HREM), and photoluminescence (PL) data indicate that a single crystalline GaN layer with a wurtzite structure was epitaxially grown on a silicon substrate. The full width at half maximum (FWHM) of the x-ray rocking curve for the GaN (0002) diffraction was 16.7 arc min. A cross-sectional HREM image showed an amorphous SiNx layer at the Si/AlN interface, as well as stacking faults and inversion domain boundaries in the GaN epilayer. An intense PL emission line, which is associated with the recombination of the donor bound exciton, was observed at 10 K PL spectra (FWHM=6.8 meV) and a strong band edge emission was obtained (FWHM=33 meV) as well, even at room temperature. These results indicate that high-quality GaN can be grown on Si (111) substrates using a UHVCVD growth method.

Structural and optical characterization of GaN epilayers grown on Si(111) substrates by hydride vapor-phase epitaxy

“…The full width at half maximum (FWHM) values of (0 0 0 2) and (1 0 1 2) diffraction are 13.7 and 35.3 arcmin, respectively. The FWHM value of (0 0 02) diffraction is even less than the reported values in a range from 14.7 to 18.8 arcmin, as observed from GaN/Si(1 1 1) by MOCVD [18,19] and ultrahigh vaccum chemical vapor deposition [13]. The rocking curves of symmetric planes are normally responsive to mosaic distortions but insensitive to the pure edge threading dislocations (TDs) because these planes are undistorted by pure edge TDs [18,20].…”

“…A variety of interlayers between GaN epilayers and the sapphire substrate have been grown to reduce dislocations and/or cracks in GaN layer [9][10][11][12]. Recent experimental results have concluded that an AlN buffer layer can alleviate the difficulties of GaN growth on Si [13][14][15]. GaN-based light emitting diodes have already been reported on the Si(1 1 1) substrate [16,17].…”

Laser Molecular Beam Epitaxy Growth of GaN Layer on Sapphire (0001) Under Various Process Conditions

“…The origin of the band edge emission peak is well known from earlier experiments and the band edge emission region is mainly dominated by free exciton transition, donor-to-valence band transition and donorbound exciton transitions, among others. [14][15][16] In addition, the thermal broadening, defect related disorder and impurities levels in the GaN film also increases the broadening of the band edge emission peak. Another peak in Fig.…”

Synthesis and characteristics of sword-like GaN nanorods clusters through ammoniating Ga2O3 thin films

“…Wide-band gap gallium nitride (GaN) and III-V nitride groups have been considered as very promising materials for their potential use in UV photodetectors, laser diodes, high-speed field-effect transistors, and high-frequency/power/ temperature electronic devices [1][2][3][4]. They have attracted much attention after the successful fabrication of high-efficiency blue light-emitting diodes and laser diodes [5][6][7].…”