Growth of high-quality InAlP/InGaP quantum wells and InAlP/InGaP superlattice barrier cladding layers by metalorganic chemical vapor deposition

Chelakara, R.V.; Islam, Md. Ashraful; Neff, J. G.; Fertitta, K. G.; Holmes, A. L.; Ciuba, F. J.; Dupuis, R. D.

doi:10.1016/0022-0248(94)91047-2

Cited by 9 publications

(3 citation statements)

References 14 publications

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“…Действительно, спектральный диапазон излучения коммерческих лазеров на основе GaN ограничен со стороны желто-зеленой области спектра длиной волны ∼ 520 нм, в то время как диапазон излучения лазеров на основе соединений InGaAlP на подложках GaAs ограничен с красно-оранжевой стороны спектра длиной волны ∼ 635 нм. Для создания лазеров, излучающих в области длин волн 560−620 нм, наиболее перспективным подходом представляется использование квантоворазмерных эффектов в структурах InGaAlP/GaAs [9][10][11][12]. Лазерная генерация в желтой части спектра (586 нм) при комнатной температуре и оптическом возбуждении была продемонстрирована еще в 1994 г.…”

Section: Introductionunclassified

Инжекционные лазеры InGaAlP/GaAs оранжевого оптического диапазона (~600 нм)

Надточий¹,

Шерняков²,

Kulagina³

et al. 2019

Физика И Техника Полупроводников

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Lasing in orange spectral range(599−605 nm)in(AlxGa1−x)0.5In0.5P−GaAs laser diodes grown by MOVPE on GaAs substrates(211) and (322) was demonstrated. The active region consisted of 4 layers of InxGa1−xP vertically coupled quantum dots. Carrier leakage from the active area was suppressed by using barriers formed with 4 quantum-sized layers of InGaAlP with high Ga content. The maximum optical power in the pulsed regime was limited by catastrophic optical mirror degradation and reached 800 mW. Lower threshold current density, higher differential efficiency, and lower internal losses were demonstrated by lasers processed from epitaxial structures grown on(322)A substrates in comparison to those grown on(211)A. This fact is due to the higher energy barrier for electrons in the first case.

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Section: Introductionunclassified

Инжекционные лазеры InGaAlP/GaAs оранжевого оптического диапазона (~600 нм)

Надточий¹,

Шерняков²,

Kulagina³

et al. 2019

Физика И Техника Полупроводников

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“…Consequently, there exists a growing interest in compact devices. InGaAlP-based laser diodes were considered initially as possible candidates [6][7][8]. Indeed emission in the yellow spectral range was realized at 77 K [9,10].…”

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confidence: 99%

(In,Ga,Al)P–GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range

Ledentsov

Shchukin

Shernyakov

et al. 2017

Semicond. Sci. Technol.

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We report on low threshold current density (<400 A cm −2 ) injection lasing in (Al x Ga 1-x ) 0.5 In 0.5 P-GaAs-based diodes down to the green spectral range (<570 nm). The epitaxial structures are grown on high-index (611)A and (211)A GaAs substrates by metalorganic vapor phase epitaxy and contain tensile-strained GaP-enriched insertions aimed at reflection of the injected nonequilibrium electrons preventing their escape from the active region. Extended waveguide concept results in a vertical beam divergence with a full width at half maximum of 15°for (611)A substrates. The lasing at the wavelength of 569 nm is realized at 85 K. In an orange-red laser diode structure low threshold current density (190 A cm −2 ) in the orange spectral range (598 nm) is realized at 85 K. The latter devices demonstrated room temperature lasing at 628 nm at ∼2 kA cm −2 and a total power above 3 W. The red laser diodes grown on (211)A substrates demonstrated a far field characteristic for vertically multimode lasing indicating a lower optical confinement factor for the fundamental mode as compared to the devices grown on (611)A. However, as expected from previous research, the temperature stability of the threshold current and the wavelength stability were significantly higher for (211) A-grown structures.

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“…The devices are complex and bulky and the wavelength adjustment is limited to only a few selected wavelengths [8,9]. InGaAlP-based laser diodes were considered as promising candidates [10][11][12][13] for providing emission in bright-red to yellow-orange spectral range. Indeed, lasing emission in the yellow spectral range was demonstrated at 77 K [14,15].…”

Section: Introductionmentioning

confidence: 99%

Room-temperature yellow-orange (In,Ga,Al)P–GaP laser diodes grown on (n11) GaAs substrates

Ledentsov¹,

Shchukin²,

Shernyakov³

et al. 2018

Opt. Express

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Abstract:We report room temperature injection lasing in the yellow-orange spectral range (599-605 nm) in (Al x Ga 1-x ) 0.5 In 0.5 P-GaAs diodes with 4 layers of tensilestrained In y Ga 1-y P quantum dot-like insertions. The wafers were grown by metal-organic vapor phase epitaxy side-by-side on (811), (211) and (322) GaAs substrates tilted towards the <111> direction with respect to the (100) surface. Four sheets of GaP-rich quantum barrier insertions were applied to suppress leakage of non-equilibrium electrons from the gain medium. Laser diodes having a threshold current densities of ~7-10 kA/cm 2 at room temperature were realized for both (211) and (322) surface orientations at cavity lengths of ~1mm. Emission wavelength at room temperature ~600 nm is shorter by ~8 nm than previously reported. As an opposite example, the devices grown on (811) GaAs substrates did not show lasing at room temperature. Feb. 5 (2018Feb. 5 ( ), https://www.theverge.com/2018 G. Craford, "Short-wavelength ( ≤ 6400 Å) room temperature continuous operation of p-n In 0.5 (Al x Ga 1−x ) 0.5 P quantum well lasers," Appl. Phys. Lett. 53(19), 1826-1828 (1988 In 1−x′ Ga x′ P 1−z′ As z′ /In 1−x Ga x P 1−z As z /In 1− x′ Ga x′ P 1−z′ As z′ yellow double-heterojunction laser diodes (J<10 4 A/cm 2 , λ~5850 Å, 77°K)," Appl. Phys. Lett. 27(4), 245-247 (1975) Appl. Phys. 59(3), 985-986 (1986 and reverse bias on photocurrent spectrum and supra-bandgap spectral response of monolithic GaInP/GaAs double-junction solar cell," Front. Optoelectron. 9(2), 306-311 (2016).

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Growth of high-quality InAlP/InGaP quantum wells and InAlP/InGaP superlattice barrier cladding layers by metalorganic chemical vapor deposition

Cited by 9 publications

References 14 publications

Инжекционные лазеры InGaAlP/GaAs оранжевого оптического диапазона (~600 нм)

Инжекционные лазеры InGaAlP/GaAs оранжевого оптического диапазона (~600 нм)

(In,Ga,Al)P–GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range

Room-temperature yellow-orange (In,Ga,Al)P–GaP laser diodes grown on (n11) GaAs substrates

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Growth of high-quality InAlP/InGaP quantum wells and InAlP/InGaP superlattice barrier cladding layers by metalorganic chemical vapor deposition

Cited by 9 publications

References 14 publications

Инжекционные лазеры InGaAlP/GaAs оранжевого оптического диапазона (&#126;600 нм)

Инжекционные лазеры InGaAlP/GaAs оранжевого оптического диапазона (&#126;600 нм)

(In,Ga,Al)P–GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range

Room-temperature yellow-orange (In,Ga,Al)P–GaP laser diodes grown on (n11) GaAs substrates

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Инжекционные лазеры InGaAlP/GaAs оранжевого оптического диапазона (~600 нм)

Инжекционные лазеры InGaAlP/GaAs оранжевого оптического диапазона (~600 нм)