Growth of high quality InN on production style PA‐MBE system

Abstract

We have demonstrated step‐flow growth mode of InN, with monolayer height terrace steps (0.281 nm), using a production‐style PA‐MBE system, GEN200®. The surface morphology exhibits the step‐flow features on relatively large areas and the RMS roughness over an area of 5 × 5 μm2 is 1.4 nm. We also investigated the consequences of In droplets formation during the growth and we have found that the vapor‐liquid‐solid growth mechanism generates defective layer areas underneath droplets that have been formed early in the growth process. The Hall mobility of 1µm thick InN layers, grown in such step‐flow mode is slightly higher than 1400 cm2/Vs while for other growth conditions we have obtained mobility as high as 1904 cm2/Vs at room temperature. The samples exhibit high intensity photoluminescence spectra with a band edge that shifts with free‐carrier concentration. For the lowest carrier concentration of 5.6 × 1017 cm‐3 we observe PL emission at ∼0.64 eV. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Influence of exchange and correlation on structural and electronic properties of AlN, GaN, and InN polytypes

“…In particular, remarkable breakthroughs in the growth of InN films by means of molecular beam epitaxy (MBE) have been achieved. [2][3][4] Surprisingly, for such samples a band edge as low as 0.64 eV was derived from luminescence and opticalabsorption measurements, [2][3][4] which is much smaller than the gap of 1.94 eV obtained in earlier experiments. 5 Hence, by alloying AlN, GaN and InN, it is possible to tune the band gap over a wide spectral range reaching from 0.64 eV up to 6.2 eV, i.e., covering the entire solar spectrum.…”

Photoluminescence studies of indium nitride films grown on oxide buffer by metalorganic molecular-beam epitaxy

“…Within the past decade, indium nitride (InN) has attracted immense research interest [1][2][3][4]. Compared to the other IIInitrides, InN is the least studied, but is also highly promising for further device applications in a wide range of fields including high-speed, high-frequency electronics, telecommunications, solar cells and terahertz devices [5][6][7].…”

Growth temperature and growth rate dependency on reactor pressure for InN epilayers grown by HPCVD

“…Nonetheless, a serious challenge remains in the integration of indium-rich InGaN epilayers into wide band gap group III-nitrides heterostructures due to the significantly lower growth temperatures at which indium-rich InGaN layers have to be grown by MOCVD [1] and MBE [2] compared to wide band gap group III-nitrides such as GaN (1080 °C [3]) or InGaN with low indium contents (750 °C -1000 °C, depending on the composition [4]). …”