Growth of Highly (100)‐Oriented SrTiO₃ Thin Films on Si(111) Substrates Without Buffer Layer

Abstract

The SrTiO3 (STO) thin films were directly grown on Si(111) substrates without buffer layer by an electron‐cyclotron‐resonance ion beam sputter deposition. The growth temperature was varied from 700°C to 850°C, while other parameters were kept unchanged. X‐ray structural analysis demonstrates that the growth temperature has a strong influence in tuning degree of (100) orientation. The STO film grown at 800°C is found to be the highest degree of (100) orientation (98%) and a strong (100) fiber texture. For the surface morphology, the development of plate‐shaped grains reveals a good correlation with the change in the degree of (100) orientation. Moreover, the leakage current–voltage characteristics of the Au/STO/Si(111) metal‐insulator‐semiconductor capacitors are investigated and discussed in considerable detail.

Sol–gel-processed (001)-textured BiFeO3 thin films on Pt(111)/Ti/SiO2/Si substrates with PbO seeding nanocrystals

“…4,6,10 It is therefore still highly desired to obtain BiFeO 3 lms with a certain orientation using a simple sol-gel process on the conventional silicon wafers, which are widely used in modern electronic industry. [11][12][13] Certainly, some studies have been done about the sol-gel processing of textured BiFeO 3 thin lms. 14 For example, Chang et al reported (001)-oriented BiFeO 3 on a glass substrate by reducing the thickness of Pt electrode via sol-gel method.…”

Ferroelectric Phase Transition, Interfaces Quality, and Stress Evolution of TiOx/BaxSr1−xTiO3 Structures

“…Furthermore, a lot of results have shown a strong link between the orientation and microstructure of the films and tunability . The control of the film orientation can be obtained by different ways: deposition parameters, nature of the substrate (or bottom electrode), or introduction of a buffer layer . In this investigation, we have chosen this latter option for the film orientation control.…”

“…12,13 The control of the film orientation can be obtained by different ways: deposition parameters, 14,15 nature of the substrate (or bottom electrode) 16 , or introduction of a buffer layer. [17][18][19] In this investigation, we have chosen this latter option for the film orientation control. In fact, the choice to introduce a buffer layer has been made for various reasons: this approach is independent of the substrate, the growth temperature (or postannealing treatment) can be decreased while maintaining a crystalline quality, and the tunability is very sensitive to strain.…”

Nucleation kinetics of SrTiO3 3D islands and nanorings on Si substrates

“…SrTiO 3 thin films have been prepared on Si substrates by several vacuum techniques, such as molecular beam epitaxy (MBE), [10][11][12][13][14][15][16] sputtering, 21 pulsed laser ablation, 22 physical vapour deposition (PVD) 23 and electron-cyclotron-resonance ion beam sputter deposition. 24 A deep understanding on the growth mechanisms, interfacial layer properties and the effect of buffer layers on the structure of SrTiO 3 has been achieved through the use of these techniques. Solution-based methods, based on metalorganic decomposition (MOD) processes offer a versatile and low-cost alternative to vacuum techniques, as they are capable of producing crystalline deposits of a wide range of perovskite materials on large areas with uniform composition and thickness.…”