Growth of homogeneous mixed crystals of In0.3Ga0.7As by the traveling liquidus-zone method

Numerical analysis of growth rates in the traveling liquidus-zone method

“…The traveling liquidus-zone (TLZ) method [1,2] can grow a homogeneous crystal of a ternary compound semiconductor such as In 0. 3 translating a sample with the same rate as an estimated growth rate.…”

Homogeneous SiGe crystals grown by using the traveling liquidus-zone method

“…However, it is still difficult to obtain the homogeneous crystals. Thus we have developed a new technique called the traveling liquidus-zone (TLZ) method [10,11], which is one of the solution zone methods. A feature of the TLZ method is to easily determine a proper sample translation rate for the homogeneous crystal growth.…”

A modified zone growth method for an InGaAs single crystal

“…Therefore, growth methods for semiconductor alloys bulk crystals are highly desirable. Growth methods for InGaAs, AlGaSb, InGaSb, SiGe, and other semiconductor alloy bulk crystals have been investigated [1][2][3][4][5][6][7][8][9][10][11][12].…”