A modified zone growth method for an InGaAs single crystal

Growth of homogeneous semiconductor mixed crystals by the traveling liquidus-zone method

“…(3), and achieving compositional uniformity becomes difficult [9]. The reason why many researchers in solvent-zone growth were not always successful in obtaining compositionally uniform mixed crystals may be due to difficulty in controlling the solute transport rate to the growth interface in the presence of convection [3][4][5]14]. One more limitation is constitutional supercooling.…”

“…However, the growth of homogeneous mixed bulk crystals was very difficult due to large separation of the liquidus and solidus lines in their phase diagrams. Traveling solvent-zone growth is a promising growth method, which enables us to obtain homogeneous mixed crystals [1][2][3][4][5]. However, control of freezing interface temperature and solute concentration gradient ahead of the interface are still great issues for obtaining compositionally uniform crystals.…”

Liquid Phase Diffusion Growth of SiGe Single Crystals under Magnetic Fields

“…In the direction of producing crystals with uniform compositions, the multicomponent zone melting (MCZM) technique was developed for the growth of Si x Ge 1-x (13) and further utilized for Si x Ge 1-x and other alloys (14,(16)(17)(18)(19)(20). In the MCZM technique, crystal composition will vary during growth if the system is kept stationary.…”