Liquid Phase Diffusion Growth of SiGe Single Crystals under Magnetic Fields

Armour, N.; Yıldız, Mehmet; Yildiz, Emine; Dost, S.

doi:10.1149/1.2986760

Cited by 9 publications

(2 citation statements)

References 28 publications

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“…Although bulk growth of Si 1– x Ge x with a homogeneous composition still remains a challenging task, several researchers have attempted to grow a homogeneous Si 1– x Ge x bulk crystal. − To grow a homogeneous crystal, the understanding of solute transport in the solution is necessary. Armour et al reported that the dissolution of silicon into the germanium melt was slightly higher with an applied magnetic field compared with that without a field. − In the vertical gradient freezing method, as the crystal growth proceeds, the growth interface shifts toward the high-temperature region, which causes a gradual increase in the temperature of the growth interface; the corresponding composition varies along the solidus line of the Si–Ge binary phase diagram. Thus, control of the temperature at the growth interface is required and is the key factor in obtaining a homogeneous crystal.…”

Section: Introductionmentioning

confidence: 99%

High Power Factor of Ga-Doped Compositionally Homogeneous Si_0.68Ge_0.32 Bulk Crystal Grown by the Vertical Temperature Gradient Freezing Method

Omprakash

Arivanandhan

Koyama

et al. 2015

Crystal Growth & Design

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Compositionally homogeneous Ga-doped Si0.68Ge0.32 bulk crystals were grown with two different doping concentrations, i.e., 1 × 1018 cm–3 (GSG1) and 1 × 1019 cm–3 (GSG2), using a vertical gradient freezing method. The growth was carried out under a mild temperature gradient of 0.57 °C/mm using a sandwich structured sample, i.e., Si(seed)/Ga-doped Ge/Si(feed). The grown crystals were cut along the growth direction to study the compositional variations, etch pit densities (EPDs), and thermoelectric characteristics. Electron backscatter diffraction analysis indicated that the (111) orientation has a larger area compared with other orientations in the grown crystal. The electrical resistivity decreased along the growth direction, although the carrier concentrations and mobility of the crystals were unchanged, possibly because of the variation in EPDs. Moreover, the electrical resistivity was found to be large at the high EPD region of the crystal. The electrical resistivity of all the samples gradually increased with temperature. The maximum values of Seebeck coefficients in GSG1 and GSG2 samples were 466 μV/K at 818 K and 459 μV/K at 892 K, respectively. The calculated power factors of GSG1 and GSG2 were higher than previously reported values (1416 μW m–1 K–2) for Si0.81Ge0.19.

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Section: Introductionmentioning

confidence: 99%

High Power Factor of Ga-Doped Compositionally Homogeneous Si_0.68Ge_0.32 Bulk Crystal Grown by the Vertical Temperature Gradient Freezing Method

Omprakash

Arivanandhan

Koyama

et al. 2015

Crystal Growth & Design

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“…However, the production of bulk SiGe single crystals with desired crystal compositions is problematic due to the large miscibility gap inherent to the alloy. A solution growth technique called Liquid Phase Diffusion (LPD) has been developed to produce graded composition bulk Germanium rich SiGe crystals (1,(3)(4)(5)(6)(7)(8).…”

Section: Introductionmentioning

confidence: 99%

The Effect of Applied Magnetic Fields on Silicon Transport in Liquid Phase Diffusion Growth of SiGe

Armour¹,

Dost²

2010

ECS Trans.

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The effect of applied rotating and static magnetic fields on silicon transport during the liquid phase diffusion growth of SiGe was experimentally studied. The fields were examined on their own and in combination. A 72-hour growth period was used to produce the concentration profiles. Single crystal growth was not of primary concern. The effect of the magnetic fields on the thermal field in the system was significant, often inhibiting good growth conditions. The static field had the effect of slowing transport when compared with a sample processed with no applied field. The application of rotating magnetic field leads to additional mixing and enhances transport in the melt compared with that with no field. The combined field exhibited a similar concentration profile to the rotating field alone.

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Effect of a static magnetic field on silicon transport in liquid phase diffusion growth of SiGe

Armour

Dost

2010

Cryst. Res. Technol.

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Liquid phase diffusion experiments have been performed without and with the application of a 0.4 T static magnetic field using a three-zone DC furnace system. SiGe crystals were grown from the germanium side for a period of 72 h. Experiments have led to the growth of single crystal sections varying from 0 to 10 mm thicknesses. Examination of the processed samples (single and polycrystalline sections) has shown that the effect of the applied static magnetic field is significant. It alters the temperature distribution in the system, reduces mass transport in the melt, and leads to a much lower growth rate. The initial curved growth interface was slightly flattened under the effect of magnetic field. There were no growth striations in the single crystal sections of the samples.

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Liquid Phase Diffusion Growth of SiGe Single Crystals under Magnetic Fields

Cited by 9 publications

References 28 publications

High Power Factor of Ga-Doped Compositionally Homogeneous Si_0.68Ge_0.32 Bulk Crystal Grown by the Vertical Temperature Gradient Freezing Method

High Power Factor of Ga-Doped Compositionally Homogeneous Si_0.68Ge_0.32 Bulk Crystal Grown by the Vertical Temperature Gradient Freezing Method

The Effect of Applied Magnetic Fields on Silicon Transport in Liquid Phase Diffusion Growth of SiGe

Effect of a static magnetic field on silicon transport in liquid phase diffusion growth of SiGe

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Liquid Phase Diffusion Growth of SiGe Single Crystals under Magnetic Fields

Cited by 9 publications

References 28 publications

High Power Factor of Ga-Doped Compositionally Homogeneous Si0.68Ge0.32 Bulk Crystal Grown by the Vertical Temperature Gradient Freezing Method

High Power Factor of Ga-Doped Compositionally Homogeneous Si0.68Ge0.32 Bulk Crystal Grown by the Vertical Temperature Gradient Freezing Method

The Effect of Applied Magnetic Fields on Silicon Transport in Liquid Phase Diffusion Growth of SiGe

Effect of a static magnetic field on silicon transport in liquid phase diffusion growth of SiGe

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Product

Resources

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High Power Factor of Ga-Doped Compositionally Homogeneous Si_0.68Ge_0.32 Bulk Crystal Grown by the Vertical Temperature Gradient Freezing Method

High Power Factor of Ga-Doped Compositionally Homogeneous Si_0.68Ge_0.32 Bulk Crystal Grown by the Vertical Temperature Gradient Freezing Method