Growth of III-Nitrides with Halide Vapor Phase Epitaxy (HVPE)

Hemmingsson, Carl; Ḿonemar, B.; Kumagai, Yoshinao; Koukitu, Akinori

doi:10.1007/978-3-540-74761-1_26

Cited by 12 publications

(14 citation statements)

References 108 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…17 However, the surface in our as-grown samples is usually rough and has to be polished before optical investigations. Thus, different structural defects can be introduced near the surface due to such treatment.…”

Section: à2mentioning

confidence: 99%

See 1 more Smart Citation

Optical properties of C-doped bulk GaN wafers grown by halide vapor phase epitaxy

Khromov

Hemmingsson

Ḿonemar

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

Optical and structural studies of homoepitaxially grown m-plane GaN Appl. Phys. Lett. 100, 172108 (2012) Freestanding bulk C-doped GaN wafers grown by halide vapor phase epitaxy are studied by optical spectroscopy and electron microscopy. Significant changes of the near band gap (NBG) emission as well as an enhancement of yellow luminescence have been found with increasing C doping from 5 Â 10 16 cm À3 to 6 Â 10 17 cm À3. Cathodoluminescence mapping reveals hexagonal domain structures (pits) with high oxygen concentrations formed during the growth. NBG emission within the pits even at high C concentration is dominated by a rather broad line at $3.47 eV typical for n-type GaN. In the area without pits, quenching of the donor bound exciton (DBE) spectrum at moderate C doping levels of 1-2 Â 10 17 cm À3 is observed along with the appearance of two acceptor bound exciton lines typical for Mg-doped GaN. The DBE ionization due to local electric fields in compensated GaN may explain the transformation of the NBG emission. V C 2014 AIP Publishing LLC.

show abstract

Section: à2mentioning

confidence: 99%

“…8 Fabrication of large area GaN substrates with a relatively low concentration of impurities (still barely available) has so far been done by halide vapor phase epitaxy (HVPE). [15][16][17] Unintentionally doped HVPE GaN has a moderate concentration of the residual donors (i.e., silicon and oxygen) of $10 17 cm…”

mentioning

confidence: 99%

Optical properties of C-doped bulk GaN wafers grown by halide vapor phase epitaxy

Khromov

Hemmingsson

Ḿonemar

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…By thermodynamic calculation, the reaction (3.1) is predominant when the temperature is above 500 o C [93]. By keeping the temperature around 800-900 o C, the efficiency of reaction (1) is very high [94].…”

Section: Halide (Hydride) Vapor Phase Epitaxy (Hvpe)mentioning

confidence: 98%

Investigation of deep levels in bulk GaN

Duc¹

2014

View full text Add to dashboard Cite

The first gallium nitride (GaN) crystal was grown by hydride vapor phase epitaxy in 1969 by Maruska and Tietjen and since then, there has been an intensive development of the field, especially after the ground breaking discoveries concerning growth and p-type doping of GaN done by the 2014 year Nobel Laureates in Physics, Isamu Akasaki, Hiroshi Amano and Shuji Nakamura. GaN and its alloys with In and Al belong to a semiconductor group which is referred as the III-nitrides. It has outstanding properties such as a direct wide bandgap (3.4 eV for GaN), high breakdown voltage and high electron mobility. With these properties, GaN is a promising material for a variety of applications in electronics and optoelectronics. The perhaps most important application is GaN-based light-emitting-diodes (LED) which can produce a highbrightness blue light. Since the bandgap of GaN can be controlled by alloying it with aluminium (Al) or indium (In) for a larger or smaller bandgap, respectively, GaN is very important for optoelectronic applications from infrared to the deep ultraviolet region. There are other semiconductors with bandgap similar to GaN such as SiC, and the first commercially blue light emitting LEDs where manufactured in SiC, however, SiC has an indirect bandgap with a low efficiency of emitting photons, and today, the SiC based LEDs have been completely replaced by the considerable more efficient GaN based LEDs. One problem, which has hampered the development of GaN based devices, is the lack of native substrate of GaN. Due to that, most of the GaN based devices are fabricated on foreign substrates such as SiC or Al2O3. Growing on a foreign substrate results in high threading dislocation (TD) densities (~109 cm-2) and stress in the GaN layer due to lattice mismatch and difference of thermal expansion coefficient between GaN and the substrate. The high TD density and the stress influence the performance of the devices. Another important aspect related to GaN which has attracted manystudies is how defects affect the efficiency of GaN-based devices.Therefore, it is necessary to understand the properties and to identifythem. When we know there properties, one can estimate how they willinfluence the behavior of devices, and thereby, optimize the performance of the device for its application. Basically, a fundamental knowledge of defect properties, and how to introduce them in a controlled manner, or to avoid them, is important in order to optimize the performance of devices. Defects can be introduced both intentionally and unintentionally into semiconductors during the growth process, during processing of the device or from the working environment, for example, devices working in a radioactive ambient are more likely to have defects induced by irradiation. This thesis is focused on electrical characterization of defects in bulk GaN grown by halide vapor phase epitaxy (HVPE) by using deep level transient spectroscopy. Other measurement techniques like currentvoltage measurement (IV), capacitance-voltage measurement (CV) a...

show abstract

“…This method, including its variant iodine vapour phase epitaxy (IVPE) (Cai et al, 2010), and corresponding mathematical models are well documented (see, in addition to the just cited chapter, for example (Dmitriev & Usikov, 2006;Hemmingsson et al, 2010;Segal et al, 2009) and the references therein), thus only a few comments are in order here. The uniqueness of HVPE is the applicability of this method to both growth of thick substrates and epitaxial heterostructures due to an extremely wide range of growth rates (1 -150 µm/hour), the low cost compared to the MOCVD, an ability to grow the heavily doped p-layers, an absence of the carbon contamination.…”

Section: Halide (Hydride) Vapour Phase Epitaxy -Hvpementioning

confidence: 99%