Growth of III-VI Compound Semiconductors by Metalorganic Molecular Beam Epitaxy

Teraguchi, N.; Kato, F.; Konagai, Makoto; Takahashi, Kiyoshi

doi:10.1143/jjap.28.l2134

Cited by 28 publications

(5 citation statements)

References 13 publications

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“…For the Ga-Te system, the other possible stable phase is Ga 2 Te 3 [ 105 ]. The Ga 2 Te 3 films were successfully synthesized by metalorganic MBE on both InP(001) and GaAs(001) substrates at T S = 400–500 °C under strong Te-rich conditions (Te/Ga ~ 30) [ 106 , 107 ]. However, no evidence of Ga 2 Te 3 inclusions has been obtained in MBE grown GaTe/GaAs(001) epilayers at much lower (Te/Ga ~ 10) flux ratio [ 108 ].…”

Section: Resultsmentioning

confidence: 99%

Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

et al. 2020

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Development of molecular beam epitaxy (MBE) of two-dimensional (2D) layered materials is an inevitable step in realizing novel devices based on 2D materials and heterostructures. However, due to existence of numerous polytypes and occurrence of additional phases, the synthesis of 2D films remains a difficult task. This paper reports on MBE growth of GaSe, InSe, and GaTe layers and related heterostructures on GaAs(001) substrates by using a Se valve cracking cell and group III metal effusion cells. The sophisticated self-consistent analysis of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy data was used to establish the correlation between growth conditions, formed polytypes and additional phases, surface morphology and crystalline structure of the III–VI 2D layers. The photoluminescence and Raman spectra of the grown films are discussed in detail to confirm or correct the structural findings. The requirement of a high growth temperature for the fabrication of optically active 2D layers was confirmed for all materials. However, this also facilitated the strong diffusion of group III metals in III–VI and III–VI/II–VI heterostructures. In particular, the strong In diffusion into the underlying ZnSe layers was observed in ZnSe/InSe/ZnSe quantum well structures, and the Ga diffusion into the top InSe layer grown at ~450 °C was confirmed by the Raman data in the InSe/GaSe heterostructures. The results on fabrication of the GaSe/GaTe quantum well structures are presented as well, although the choice of optimum growth temperatures to make them optically active is still a challenge.

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Section: Resultsmentioning

confidence: 99%

Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

et al. 2020

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“…In the α-form, the vacancies are randomly distributed at the cationic sites, while the β-form shows zigzag-ordered vacancies, arranged in a superstructure originating from the α-Ga 2 Se 3 structure [2,3]. Recently, interest in the III-VI defect compounds-especially Ga sesqui-chalcogenides-has increased as they are promising materials for use in optoelectronic devices [4] and are good candidates for the passivation of heterogeneous ZnSe/GaAs interfaces [5].…”

Section: Introductionmentioning

confidence: 99%

Deposition and characterization of Ga₂Se₃thin films prepared by a novel chemical close-spaced vapour transport technique

Rusu¹,

Wiesner²,

Lindner³

et al. 2003

J. Phys.: Condens. Matter

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Single-phase Ga2Se3 films have been deposited with a growth rate of about 30 nm min−1 on clean and Mo-coated soda-lime glass substrates by chemical close-spaced vapour transport. The use of HCl/H2 as a transport agent results in a stoichiometric volatilization of the binary Ga2Se3 powder source material and the growth of Ga2Se3 films with reproducible composition. The films have been characterized using x-ray diffraction measurements, scanning electron microscopy observations, energy dispersive x-ray analysis, x-ray fluorescence spectrometry and elastic recoil detection analysis. A p-type conductivity was determined by means of the thermoelectric probe method. A Ga2Se3 band gap energy Eg = 2.56 eV has been found by optical measurements.

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“…[1][2][3] When epitaxialized, for example, Ga 2 Se 3 has an orthorhombic defect zinc-blende structure, [4][5][6] where every atom is located at the zinc-blende site and one third of the cation sites are occupied by the vacancies. Since the vacancies form an array along the [110] direction, the characteristic electronic properties are expected compared to the familiar zinc-blende and chalcopyrite semiconductors.…”

Section: §1 Introductionmentioning

confidence: 99%

Raman Spectra Calculation of Ordered-Vacancy Ga₂Se₃Compounds; Origin of Anisotropy

2000

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Polarized Raman spectra of ordered-vacancy Ga 2 Se 3 were calculated using the sp 3 s * tightbinding and vibration models. We found a large peak around 150 cm −1 which originates from the breathing-like movement of Se atoms around the vacancy. Reflecting the localized nature of vibration and the dangling-bond direction of three-coordinated Se atoms, this peak shows large intensity and anisotropy; the intensity is large for the light polarization perpendicular to the vacancy array, in contrast to the anisotropy observed in the photo-absorption and luminescence. These results well explain the experiments.Due to the misvalency between III and VI atoms, III 2 IV 3 compounds show a variety of crystal polymorphism depending on the growth condition. 1-3) When epitaxialized, for example, Ga 2 Se 3 has an orthorhombic defect zinc-blende structure, 4-6) where every atom is located at the zinc-blende site and one third of the cation sites are occupied by the vacancies. Since the vacancies form an array along the [110] direction, the characteristic electronic properties are expected compared to the familiar zinc-blende and chalcopyrite semiconductors. In fact, Okamoto et al. found that both the photo-absorption and luminescence around the fundamental band-gap energy are extremely anisotropic; they are large for the light polarization parallel to the vacancy array. 7, 8) Nakayama and Ishikawa calculated the electronic structures and the absorption spectra of this system, 9) and clarified that the dangling bonds of twocoordinated Se produce one-dimensional band along the [110] direction at the valence band top and the optical transitions from this band become the origin of such anisotropy.On the other hand, to clarify the crystal quality of MBE-grown orthorhombic Ga 2 Se 3 , Yamada et al. carried out the polarized Raman spectrum experiment in a back-scattering geometry. 6, 10) They found that there appears a large peak around 155 cm −1 and its intensity is large for the light polarization perpendicular to the vacancy array, in contrast to the cases of photoabsorption and luminescence. 7, 8) Using a simple vibration model with the interatomic force constants, they assigned that this peak originates from the A 1 -symmetry vibration mode and supposed that such mode is closely related to the vacancy array. However, the origins of the observed large intensity and the different anisotropy from that in the photo-absorption and emission have not been clarified yet. The purpose of this paper is to clarify 3860 these origins by calculating polarized Raman spectra of orthorhombic Ga 2 Se 3 , using the simple vibration model for phonons and the tight-binding method for electronic structures. §2. Geometry and Calculational Method Figure 1 shows the schematic picture of orthorhombic Ga 2 Se 3 viewed from the [001] direction. The unit cell denoted by the arrows is three times large along y compared to x, where x and y denote the [110] and [110] directions, respectively. Vacancies are arranged along x and this system has C 20 2v symmetry. I...

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Growth of III-VI Compound Semiconductors by Metalorganic Molecular Beam Epitaxy

Cited by 28 publications

References 13 publications

Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

Deposition and characterization of Ga₂Se₃thin films prepared by a novel chemical close-spaced vapour transport technique

Raman Spectra Calculation of Ordered-Vacancy Ga₂Se₃Compounds; Origin of Anisotropy

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Growth of III-VI Compound Semiconductors by Metalorganic Molecular Beam Epitaxy

Cited by 28 publications

References 13 publications

Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

Deposition and characterization of Ga2Se3thin films prepared by a novel chemical close-spaced vapour transport technique

Raman Spectra Calculation of Ordered-Vacancy Ga2Se3Compounds; Origin of Anisotropy

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Deposition and characterization of Ga₂Se₃thin films prepared by a novel chemical close-spaced vapour transport technique

Raman Spectra Calculation of Ordered-Vacancy Ga₂Se₃Compounds; Origin of Anisotropy