Growth of In0.25Ga0.75As quantum dots on GaP utilizing a GaAs interlayer

Stracke, Gernot; Glacki, Alexander; Nowozin, Tobias; Bonato, Leo; Rodt, Sven; Prohl, Christopher; Lenz, Andreas; Eisele, H.; Schliwa, A.; Strittmatter, A.; Pohl, Udo W.; Bimberg, D.

doi:10.1063/1.4768294

Cited by 18 publications

(19 citation statements)

References 18 publications

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“…InGaAs QDs embedded in GaP lead to an increase in the hole storage time by several orders of magnitude as compared to QDs embedded in GaAs. 8,9 Even larger hole localization energies retention times up to years are predicted 10 for InGaSb/GaP QDs. The hole localization energy for In 0.5 Ga 0.5 Sb/GaAs QDs was calculated to be 919 meV (corresponding to 4 h retention time).…”

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confidence: 99%

Growth and structure of In0.5Ga0.5Sb quantum dots on GaP(001)

Sala

Stracke

Selve

et al. 2016

Applied Physics Letters

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Stranski-Krastanov (SK) growth of In0.5Ga0.5Sb quantum dots (QDs) on GaP(001) by metalorganic vapor phase epitaxy is demonstrated. A thin GaAs interlayer prior to QD deposition enables QD nucleation. The impact of a short Sb-flush before supplying InGaSb is investigated. QD growth gets partially suppressed for GaAs interlayer thicknesses below 6 monolayers. QD densities vary from 5 × 109 to 2 × 1011 cm−2 depending on material deposition and Sb-flush time. When In0.5Ga0.5Sb growth is carried out without Sb-flush, the QD density is generally decreased, and up to 60% larger QDs are obtained.

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confidence: 99%

Growth and structure of In0.5Ga0.5Sb quantum dots on GaP(001)

Sala

Stracke

Selve

et al. 2016

Applied Physics Letters

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“…However, the growth of defect-free systems, in particular by the most important mass production process MOCVD (Metal Organic Chemical Vapour Deposition), is very challenging due to the large lattice mismatch between Sb-and P-based structures (GaAs/GaP 3.6 %, In 0.5 Ga 0.5 As/GaP 7.4 %, InAs/GaP 11.5 %, GaSb/GaP 11.8 %, InSb/GaP 18.9 % [51]). Using specific growth engineering of MOCVD, In 0.5 Ga 0.5 As/GaP QDs have been obtained by Stracke et al [52,53] and a hole storage time at room temperature of about 4 min was reported [54]. Further improvement in the storage time beyond the magic 10 y limit might be obtained for type-II antimonybased QDs in an (AlGa)P matrix [55,56].…”

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Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

et al. 2019

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The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs exhibit concurrently direct and indirect transitions, which allows the swapping of Γ and L quantum confined states in energy, depending on details of their stoichiometry. Based on realistic data on QD structure and composition, derived from high-resolution transmission electron microscopy (HRTEM) measurements, simulations by means of k · p theory are performed. The theoretical prediction of both momentum direct and indirect type-I optical transitions are confirmed by the experiments presented here. Additional investigations by a combination of Raman and photoreflectance spectroscopy show modifications of the hydrostatic strain in the QD layer, depending on the sequential addition of QDs and capping layer. A variation of the excitation density across four orders of magnitude reveals a 50 meV energy blueshift of the QD emission. Our findings suggest that the assignment of the type of transition, based solely by the observation of a blueshift with increased pumping, is insufficient. We propose therefore a more consistent approach based on the analysis of the character of the blueshift evolution with optical pumping, which employs a numerical model based on a semi-self-consistent configuration interaction method.

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“…2,3 Being an indirect semiconductor, GaP cannot serve as active medium for efficient photonic devices. Consequently, several studies of InGaAs [4][5][6][7][8] and InGaAsN 9 QDs on GaP have been published during the last years, including an InGaAs/GaP QD light emitting diode on Si substrate. 10 The extreme lattice mismatch of 11.2% between InAs and GaP on the one hand represents a challenge for the growth of dislocation-free QD structures.…”

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Indirect and direct optical transitions in In0.5Ga0.5As/GaP quantum dots

Stracke

Sala

Selve

et al. 2014

Applied Physics Letters

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We present a study of self-assembled In0.5Ga0.5As quantum dots on GaP(001) surfaces linking growth parameters with structural, optical, and electronic properties. Quantum dot densities from 5.0 × 107 cm−2 to 1.5 × 1011 cm−2 are achieved. A ripening process during a growth interruption after In0.5Ga0.5As deposition is used to vary the quantum dot size. The main focus of this work lies on the nature of optical transitions which can be switched from low-efficient indirect to high-efficient direct ones through improved strain relief of the quantum dots by different cap layers.

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Growth of In0.25Ga0.75As quantum dots on GaP utilizing a GaAs interlayer

Cited by 18 publications

References 18 publications

Growth and structure of In0.5Ga0.5Sb quantum dots on GaP(001)

Growth and structure of In0.5Ga0.5Sb quantum dots on GaP(001)

Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

Indirect and direct optical transitions in In0.5Ga0.5As/GaP quantum dots

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