Growth of InAIGaAs strained quantum well structures for reliable 0.8 μm lasers

Baumann, John A.; Dalby, R. J.; Waters, R. G.; Yellen, S.L.; Harding, C. M.; Shepard, Allan H.

doi:10.1007/bf02655271

Cited by 7 publications

(3 citation statements)

References 43 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…8 It was found that for InGaAs graded index separate confinement heterostructure ͑GRINSCH͒ SSQW lasers, the minimum fraction of indium in the active layer for the suppression of DLDs growth is between 3% and 10%. The MBE materials growth temperature on their devices is about 800°C.…”

Section: Resultsmentioning

confidence: 99%

“…2 In In x Ga 1Ϫx As/GaAs strained heterostructures, an inhibition of ͗100͘ DLDs was found when the indium fraction is higher than 3%. 8 Some papers have shown the results of cw operation of strained InGaAs laser over a period of 60 000 h without ''freak'' failures. 8 Waters et al 9 suggest that the resistance of the ͗100͘ DLDs propagation may be due to indium pinning.…”

Section: Introductionmentioning

confidence: 99%

“…8 Some papers have shown the results of cw operation of strained InGaAs laser over a period of 60 000 h without ''freak'' failures. 8 Waters et al 9 suggest that the resistance of the ͗100͘ DLDs propagation may be due to indium pinning. However, it is unclear why the propagation of DLDs in ͗110͘ direction still exists in the strained structure.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Analysis of dark-line defect growth suppression in InxGa1−xAs/GaAs strained heterostructures

Wang

Hopgood

1997

Journal of Applied Physics

View full text Add to dashboard Cite

Erratum: "X-ray reciprocal space mapping of dislocation-mediated strain relaxation during InGaAs/GaAs(001) epitaxial growth" [J.The driving force of ͗100͘ dark-line defect ͑DLD͒ climbing growth based on vacancy unsaturation is discussed. In In x Ga 1Ϫx As/GaAs strained structures, it is found that compressive strain can reduce the osmotic ͑climb͒ force and can suppress the climb of DLDs in ͗100͘ direction. The percentage of indium in In x Ga 1Ϫx As/GaAs strained heterostructures for the suppression of ͗100͘ DLD propagation is calculated under different material growth temperatures and doping levels. For an n-type doping level higher than 5ϫ10 16 cm Ϫ3 , an indium percentage less than approximately 9% in In x Ga 1Ϫx As/GaAs heterostructures is sufficient to stop the ͗100͘ DLDs growth and agrees well with the experimental observation. These results are useful for the design and fabrication of high reliability strained heterostructure devices.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%