Growth of InAs/InP(001) nanostructures: The transition from quantum wires to quantum dots

Parry, H. J.; Ashwin, M. J.; Neave, J.H.; Jones, T. S.

doi:10.1016/j.jcrysgro.2005.01.100

Cited by 11 publications

(5 citation statements)

References 7 publications

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“…InAs layers with As-rich condition typically show elongated spots in the [110] direction and chevron features in the [1][2][3][4][5][6][7][8][9][10] direction in the RHEED patterns. The surface morphology of 5.5-nm-thick InAs layers grown on InP(001) substrates, characterized using atomic force microscopy (AFM), are in good agreement with the previous results [22,23], which show that InAs initially forms nanometer-scale wire-like structures along the [1-10] direction with small 3-D islands at the kinks. The number of kinks and size of 3-D islands are found to increase with the V/III ratio, which results in a rough surface.…”

Section: Resultssupporting

confidence: 89%

Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces

Lee

Choi

Pendharkar

et al. 2019

Phys. Rev. Materials

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We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1-D) channels using patterned SiO 2 -coated InP(001), InP(111)B, and InP(110) substrates to establish a scalable platform for topological superconductor networks. Top-view scanning electron micrographs show excellent surface selectivity and dependence of major facet planes on the substrate orientations and ridge directions, and the ratios of the surface energies of the major facet planes were estimated. Detailed structural properties and defects in the InAs nanowires (NWs) were characterized by transmission electron microscopic analysis of cross-sections perpendicular to the NW ridge direction and along the NW ridge direction. Electrical transport properties of the InAs NWs were investigated using Hall bars, a field effect mobility device, a quantum dot, and an Aharonov-Bohm loop device, which reflect the strong spin-orbit interaction and phase-coherent transport characteristic in the selectively grown InAs systems.This study demonstrates that selective-area chemical beam epitaxy is a scalable approach to realize semiconductor 1-D channel networks with the excellent surface selectivity and this material system is suitable for quantum transport studies.

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Section: Resultssupporting

confidence: 89%

Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces

Lee

Choi

Pendharkar

et al. 2019

Phys. Rev. Materials

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“…As has been shown previously, 14,15 these dashes tend to line up along the ͓−110͔ direction. The InAs wetting layer displayed a 2D morphology, with rms roughness across a 2.5 m 2 area of 0.247 nm.…”

Section: Resultssupporting

confidence: 80%

Growth by molecular beam epitaxy of self-assembled InAs quantum dots on InAlAs and InGaAs lattice-matched to InP

Simmonds

Beere

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested in Formation and property of InSb self-assembled quantum dots on GaAsSb lattice matched to InPEffect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dotsThe authors report the results of a detailed study of the effect of growth conditions, for molecular beam epitaxy, on the structural and optical properties of self-assembled InAs quantum dots ͑QDs͒ on In 0.524 Al 0.476 As. InAs QDs both buried in, and on top of, In 0.524 Al 0.476 As were analyzed using photoluminescence ͑PL͒ and atomic force microscopy. InAs QD morphology and peak PL emission wavelength both scale linearly with deposition thickness in monolayers ͑MLs͒. InAs deposition thickness can be used to tune QD PL wavelength by 170 nm/ML, over a range of almost 700 nm. Increasing growth temperature from 440 to 480°C results in a linear decrease in QD size and a blueshift in peak emission wavelength of 3.5 nm/°C. This is a direct result of the temperature dependence of the In-sticking coefficient. InAs deposited on InP-lattice-matched In 0.532 Ga 0.468 As forms larger, lower-density features with longer PL wavelength, as expected from a consideration of the effects of In segregation and intermixing on strain and surface roughness. Choice of buffer material is shown to be critical to QD characteristics.

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“…The growth of quantum dots has been an approach widely investigated, both for the InAs/InP system [1][2][3][4] and for other heteroepitaxial material systems [5]. However, some groups [6][7][8][9] have demonstrated that the controlled epitaxial growth of InAs quantum wires on InP substrates is another valuable approach to fabricate materials emitting in infrared wavelengths of interest for telecommunications. It is worth mentioning that these wires are grown epitaxially on the substrate surface, in contrast to other wires investigated for many authors [10,11], which are vertically grown upward from the substrate.…”

Section: Introductionmentioning

confidence: 99%

Determination of the strain generated in InAs/InP quantum wires: prediction of nucleation sites

et al. 2006

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The compositional distribution in a self-assembled InAs(P) quantum wire grown by molecular beam epitaxy on an InP(001) substrate has been determined by electron energy loss spectrum imaging. We have determined the strain and stress fields generated in and around this wire capped with a 5 nm InP layer by finite element calculations using as input the compositional map experimentally obtained. Preferential sites for nucleation of wires grown on the surface of this InP capping layer are predicted, based on chemical potential minimization, from the determined strain and stress fields on this surface. The determined preferential sites for wire nucleation agree with their experimentally measured locations. The method used in this paper, which combines electron energy loss spectroscopy, high-resolution Z contrast imaging, and elastic theory finite element calculations, is believed to be a valuable technique of wide applicability for predicting the preferential nucleation sites of epitaxial self-assembled nano-objects.

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Growth of InAs/InP(001) nanostructures: The transition from quantum wires to quantum dots

Cited by 11 publications

References 7 publications

Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces

Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces

Growth by molecular beam epitaxy of self-assembled InAs quantum dots on InAlAs and InGaAs lattice-matched to InP

Determination of the strain generated in InAs/InP quantum wires: prediction of nucleation sites

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