Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces

Abstract

We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1-D) channels using patterned SiO 2 -coated InP(001), InP(111)B, and InP(110) substrates to establish a scalable platform for topological superconductor networks. Top-view scanning electron micrographs show excellent surface selectivity and dependence of major facet planes on the substrate orientations and ridge directions, and the ratios of the surface energies of the major facet planes were estimated. Detailed structural properties and defects in the InAs nanowires (NWs) were characterized by transmission electron microscopic analysis of cross-sections perpendicular to the NW ridge direction and along the NW ridge direction. Electrical transport properties of the InAs NWs were investigated using Hall bars, a field effect mobility device, a quantum dot, and an Aharonov-Bohm loop device, which reflect the strong spin-orbit interaction and phase-coherent transport characteristic in the selectively grown InAs systems.This study demonstrates that selective-area chemical beam epitaxy is a scalable approach to realize semiconductor 1-D channel networks with the excellent surface selectivity and this material system is suitable for quantum transport studies.

Ballistic InSb Nanowires and Networks via Metal-Sown Selective Area Growth

“…Next, we can InAs or InSb NW crosses produced by either SAG or VLS methods. 10,12,32,33 We would like to stress that as Hall effect measurements probe the transport properties inside the NW cross junctions, the high mobility demonstrates the promising potential of our planar SAG approach in realizing advanced multi-terminal NW devices for topological quantum computing. 8,7,6 In order to benchmark our MS SAG InSb NWs with their VLS-grown counterparts using the same method 31 and to compare transport in single wires and cross structures, we also measured field-effect mobility in both single NWs and the Hall bars described above.…”

In-plane selective area InSb–Al nanowire quantum networks

“…1. These defects may act as scattering sites for electrons and can be found in many reported SAG studies 13,17,19,27 . Therefore, it is important to enable growth of a complete, in-plane network structure from a single nucleation site, which is difficult to achieve for MBE-grown InSb 18,24 .…”

“…A more scalable approach, would be to use an in-plane selective area growth (SAG) technique (i.e., parallel to the substrate surface), that relies on a template or mask to selectively grow one semiconductor material on top of another [13][14][15][16][17][18][19] . This technique has several advantages over out-of-plane growth.…”

“…Furthermore, the disorder created by the lattice mismatch can be detrimental to the topological protection of Majorana states 23 . Most of the previous SAG studies have focused on an InAs-based material system for nanowire networks [14][15][16][17]19 , which has a smaller lattice mismatch with InP or GaAs substrates. InSb nanowires have been grown by SAG using molecular beam epitaxy (MBE) 18,24 .…”

Polarity-dependent nonlinear optics of nanowires under electric field

“…During the last decade, there has been a growing interest in the production of planar nanowire arrays by exploiting the epitaxial relations between the nanowires and a crystalline substrate, by surface-guided catalytic vapour–liquid–solid (VLS) growth 15 – 23 and recently also by selective area epitaxy 24 – 26 . Surface-guided growth has been shown to enable the production of planar nanowires with a large variety of controlled crystallographic orientations, including zincblende (ZB)- and wurtzite (WZ)-structure semiconductor nanowires oriented along polar, nonpolar and semipolar directions 17 , 21 , 22 .…”