Growth of InAs quantum-dot hatches on InGaAs/GaAs cross-hatch virtual substrates

Thet, Cho Cho; Panyakeow, Somsak; Kanjanachuchai, Songphol

doi:10.1016/j.mee.2007.01.118

Cited by 12 publications

(5 citation statements)

References 18 publications

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“…Actually, it has been reported that dislocations can result in spontaneously ordered distribution of QDs in Si/Ge, GaAs/ InAs, and PbTe/PbSe systems. [15][16][17][18][19] However, to the best knowledge of the authors, so far, there are no reports discussing dislocation-induced self-assembly of QDs in InGaN/ GaN system. In this work, InGaN nano-flowers are grown on GaN by metal organic vapor phase epitaxy (MOVPE).…”

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confidence: 99%

Edge dislocation induced self-assembly of InGaN nano-flower on GaN by metal organic vapor phase epitaxy

Zhao

Wang

et al. 2011

Journal of Applied Physics

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InGaN nano-flowers are self-assembled on GaN by metal organic vapor phase epitaxy. Scanning electron microscopy and transmission electron microscopy photos show the nano-flower structure is formed through InGaN quantum dots aggregating around the exposure site of the edge dislocation extending to the surface. Calculation on the strain states indicates that the edge dislocation can generate lateral tensile and compressive strain regions on the surface, but the screw dislocation cannot. And the tensile strain regions are corresponding to the shape of the nano-flower. This is attributed to that the tensile GaN lattices on surface are easy to attract adatoms to form InGaN quantum dots.

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confidence: 99%

Edge dislocation induced self-assembly of InGaN nano-flower on GaN by metal organic vapor phase epitaxy

Zhao

Wang

et al. 2011

Journal of Applied Physics

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“…QDs on InGaAs CHPs leads to spontaneous alignment of QDs along the cross-hatches. Main parameters used to control/optimize QDs alignment are growth interruption which affects the orderliness of QDs on the hatches [16], crosshatch layer thickness, and composition which affect MD line density [17], growth rates, excess growth, and the use of spacer layer prior to QD growth [18]. The origin and evolution of InAs QD alignment on InGaAs CHPs, which apply to other material systems, are now well understood [19,20].…”

Section: Quantum Dots On Cross-hatch Patterns Growth Of Inasmentioning

confidence: 99%

InGaAs Quantum Dots on Cross‐Hatch Patterns as a Host for Diluted Magnetic Semiconductor Medium

Limwongse

Thainoi

Panyakeow

et al. 2013

Journal of Nanomaterials

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Storage density on magnetic medium is increasing at an exponential rate. The magnetic region that stores one bit of information is correspondingly decreasing in size and will ultimately reach quantum dimensions. Magnetic quantum dots (QDs) can be grown using semiconductor as a host and magnetic constituents added to give them magnetic properties. Our results show how molecular beam epitaxy and, particularly, lattice-mismatched heteroepitaxy can be used to form laterally aligned, high-density semiconducting host in a single growth run without any use of lithography or etching. Representative results of how semiconductor QD hosts arrange themselves on various stripes and cross-hatch patterns are reported.

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“…InAs QDs are useful as single photon sources and detectors [7,8]. The growth of InAs QDs on lattice-mismatched InGaAs/GaAs substrates has been demonstrated [9][10][11], but the detail of their formation has been lacking [12] II. EXPERIMENTAL DETAILS All growth takes place in a solid-source MBE system (Riber 32P) with in-situ surface monitoring via reflection high-energy electron diffraction (RHEED).…”

Section: Introductionmentioning

confidence: 99%

Complete formation sequence of InAs quantum dots on lattice-mismatched InGaAs/GaAs substrates

Kanjanachuchai

Limwongse

2010

2010 3rd International Nanoelectronics Conference (INEC)

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The complete formation sequence of InAs quantum dots (QDs) on lattice-mismatched InGaAs cross-hatch substrate has been identified. The InAs QDs sequentially form at the following locations: the dislocation free end, the dislocation Tsection, the dislocation intersection, the [1-10] dislocation line, the [110] dislocation line and the flat area. Different surface energies at these locations give rise to QD formation at different effective thicknesses and times.

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Growth of InAs quantum-dot hatches on InGaAs/GaAs cross-hatch virtual substrates

Cited by 12 publications

References 18 publications

Edge dislocation induced self-assembly of InGaN nano-flower on GaN by metal organic vapor phase epitaxy

Edge dislocation induced self-assembly of InGaN nano-flower on GaN by metal organic vapor phase epitaxy

InGaAs Quantum Dots on Cross‐Hatch Patterns as a Host for Diluted Magnetic Semiconductor Medium

Complete formation sequence of InAs quantum dots on lattice-mismatched InGaAs/GaAs substrates

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