Growth of InAsSb-channel high electron mobility transistor structures

Tinkham, B. P.; Bennett, B. R.; Magno, R.; Shanabrook, B. V.; Boos, J.B.

doi:10.1116/1.1941147

Cited by 26 publications

(10 citation statements)

References 20 publications

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“…1,2 This scheme allows one to avoid crosscontamination problems as expected, for instance, in the case of combination with SiGe-or Ge-based p-channels. In particular, the quantum-well ͑QW͒ channel devices with a highpermittivity ͑high-͒ oxide gate insulator are expected to offer significant gains.…”

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confidence: 97%

Electron band alignment at the interface of (100)GaSb with molecular-beam deposited Al2O3

Afanasʼev

Chou

Stesmans

et al. 2011

Applied Physics Letters

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From internal photoemission and photoconductivity measurements at the (100)GaSb/Al2O3 interface, the semiconductor valence band is found to be 3.05±0.10 eV below the oxide conduction band. This band alignment corresponds to conduction and valence band offsets of 2.3±0.10 and 3.05±0.15 eV, respectively. These results indicate that the valence band in GaSb lies energetically well above the valence band in InxGa1−xAs (0≤x≤0.53) or InP, suggesting the possibility of fabrication of hole quantum-well channel structures.

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confidence: 97%

Electron band alignment at the interface of (100)GaSb with molecular-beam deposited Al2O3

Afanasʼev

Chou

Stesmans

et al. 2011

Applied Physics Letters

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“…3 Recently, InAs/ Al y Ga 1−y Sb heterojunction tunnel field effect transistors ͑H-TFETs͒ have been proposed for low-power high-performance applications. 4 Integrating a high quality dielectric is key to demonstrating a scalable metal-oxide-semiconductor QWFET ͑MOS-QWFET͒ or H-TFET architecture for low-power logic applications.…”

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confidence: 99%

Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3

et al. 2010

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“…A significant difference between this structure and our earlier HEMTs 18,19 is that the InAlSb upper barrier replaces InAlAs and AlSb. 20 One reason for this change was to avoid the use of pure AlSb, because Miya et al showed that replacing 20-40% of the Al with Ga in AlGaAsSb greatly reduces oxidation. 21 The x-ray diffraction data for sample Q is shown in Fig.…”

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confidence: 99%

InAlSb/InAs/AlGaSb Quantum Well Heterostructures for High-Electron-Mobility Transistors

Bennett

Boos

Ancona

et al. 2007

Journal of Elec Materi

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Heterostructures for InAs-channel high-electron-mobility transistors (HEMTs) were investigated. Reactive AlSb buffer and barrier layers were replaced by more stable Al 0.7 Ga 0.3 Sb and In 0.2 Al 0.8 Sb alloys. The distance between the gate and the channel was reduced to 7-13 nm to allow good aspect ratios for very short gate lengths. In addition, n + -InAs caps were successfully deposited on the In 0.2 Al 0.8 Sb upper barrier allowing for low sheet resistance with relatively low sheet carrier density in the channel. These advances are expected to result in InAs-channel HEMTs with enhanced microwave performance and better reliability.

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Growth of InAsSb-channel high electron mobility transistor structures

Abstract: Articles you may be interested inMolecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure

Cited by 26 publications

References 20 publications

Electron band alignment at the interface of (100)GaSb with molecular-beam deposited Al2O3

Electron band alignment at the interface of (100)GaSb with molecular-beam deposited Al2O3

Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3

InAlSb/InAs/AlGaSb Quantum Well Heterostructures for High-Electron-Mobility Transistors

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