2009
DOI: 10.1016/j.jcrysgro.2009.01.037
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Growth of InN films and nanostructures by MOVPE

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Cited by 17 publications
(9 citation statements)
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“…High resolution X‐ray diffraction (HRXRD) θ − 2 θ spectra performed on these layers exhibit all Pendelosung fringes 70 due to the flatness of the InN surface, while AFM imaging shows a great improvement of the root mean square (rms) roughness of the layer (see Fig. 2), clearly indicating that enhanced lateral growth took place.…”
Section: A Double‐step Growth Processmentioning
confidence: 99%
See 1 more Smart Citation
“…High resolution X‐ray diffraction (HRXRD) θ − 2 θ spectra performed on these layers exhibit all Pendelosung fringes 70 due to the flatness of the InN surface, while AFM imaging shows a great improvement of the root mean square (rms) roughness of the layer (see Fig. 2), clearly indicating that enhanced lateral growth took place.…”
Section: A Double‐step Growth Processmentioning
confidence: 99%
“…We have characterized a typical GaN buffer layer by grazing incidence X‐ray diffraction to assess the crystalline quality, while grains size and density were analyzed by atomic force microscopy (AFM). Then we optimized the InN buffer layer growth process in order to achieve the same crystal quality and morphology than on typical GaN buffer layers 70 displayed in Fig. 1.…”
Section: A Double‐step Growth Processmentioning
confidence: 99%
“…High-quality InN has been grown mainly by molecular beam epitaxy (MBE) [3][4][5][6] and metalorganic vapor phase epitaxy (MOVPE) [7][8][9]. The optimal substrate temperature (T s ) for InN growth is close to the decomposition temperature of the material, around 500°C [10].…”
Section: Introductionmentioning
confidence: 99%
“…InN must be deposited at low substrate temperature to reduce the decomposition rate. From this point of view, reactive radio-frequency (RF) sputtering presents an advantage compared with other InN growth methods such as molecular-beam epitaxy (MBE) [5], metalorganic vapor phase epitaxy (MOVPE) [6], pulse laser deposition [7] and highpressure chemical vapor deposition [8]. Reactive sputtering is considered very useful to synthesize nanocrystalline InN films for relatively low-cost technology [9].…”
Section: Introductionmentioning
confidence: 99%