Growth of large diameter ZnTe single crystals by the LEK method

ZnTe single crystal growth by the liquid encapsulated pulling method

“…The p-type ZnTe crystals were obtained by the phosphorous doping and carrier concentrations were around 10 18 cm -3 . This result is similar to that of the previous work [9]. Crystals of resistivity higher than 10 3 Ωcm were successfully obtained by the Ga doping.…”

“…3 Result and discussion Although small temperature gradient is necessary for the single crystallization as concluded from the results of LEK growth experiment [9], the temperature gradient in the encapsulant should not be too small because the ZnTe seed crystal is fragile at high temperatures close to the melting point. Temperature gradients were examined to find the satisfactory condition for both singlecrystallization and preventing seed crystals from damaging.…”

“…We believe that the large temperature gradient of the LEC method [7] causes the difficulty of the single crystal growth owing to the the instability of the melt and generation of crystal defects. In our previous work, ZnTe single crystals were successfully obtained by modified liquid encapsulated Kyropoulos [8] (LEK) method using the small temperature gradient [9]. Our LEK crystals, however, had large strain and were sometimes cracked because of the difference in the thermal expansion coefficient between ZnTe and the encapsulant since the grown crystals were cooled in the encapsulant.…”

Electrooptic sensor module fabrication for near-field intrabody communication

“…Then, a marker was cut at the substrate edge to make it easy to identify the anisotropy direction. [41][42][43][44] The substrate was (b) gold-plated and then (c) The substrate was then plated with more gold (e) to produce patterned gold electrodes by a lift-off process (f ). To produce a bar-shaped substrate with electrodes (g), the substrate was cleaved at 7 mm intervals (the length of the chip) parallel to the stripes.…”

P–T–X phase equilibrium and vapor pressure scanning of non-stoichiometry in the Cd–Zn–Te system

“…Detailed analysis of the uncertainties in crystal composition dX S determined by vapor pressure scanning of non-stoichiometry for CdTe, 49 presented in an earlier section, resulted in a confidence interval dX S w10 ÿ4 at.%, the main source of it being the experimental errors in weighing out the initial samples. For Cd 1ÿx Zn x Te 1Gd , rigorous calculation of dX S is hampered by the fact that the exact numerical contribution of the adopted ideal solution model to the uncertainty dX S is unknown.…”