Growth of large ZnSe single crystal by R-CVT method

Abstract

Large ZnSe single crystals with a diameter of 30 mm and a thickness of 25 mm were successfully obtained by the rotational chemical vapor transport (R-CVT) using iodine as a transport agent, which comprises the rotation of the horizontal growth ampoule with a constant frequency. Two-step annealing was developed to ensure the stable growth of the epitaxial layer by MBE on the obtained ZnSe substrates in addition to electrical conductivity. It was demonstrated that the optical properties of the CVT-grown ZnSe, photoluminescence and excitation of SA emission, was superior for the fabrication of white LEDs. r 2004 Elsevier B.V. All rights reserved.

Chemical Etching and TEM Crystalline Quality Assessment of Single Crystalline ZnSe Ingots Grown by I2 Vapor Phase Transport

“…Although our grown material have a higher dislocations density and subgrains misorientation compared with this unique commercial analyzed wafer, these values are acceptable for manufacturing devices as they show a crystalline quality similar to those in the reported literature [22,[27][28][29]. Otherwise larger ZnSe single crystals have been successfully obtained by the rotational chemical vapor transport (R-CVT) using iodine as a transport agent that were used for the fabrication of white LED´s [26]. So, this growth method has to be taken care and improved.…”

“…A massive attack to the sample surface by the reagent had to be avoided because the material might be over-etched and no valuable information could be obtained. References could be found in the literature using strongly corrosive media at elevated temperatures and for prolonged times [2,5,12,[24][25][26]. The experience of the authors of this paper was that under these conditions the wafer surface suffers widespread damage that did not provide valid information of the material crystalline quality.…”

Yield strength and dislocation mobility in plastically deformed ZnSe

“…Details of the single-crystal growth and structural characterization are given in a previous paper [4]. Both crystals with orange color were semi-insulating.…”

New photocathode using ZnSe substrates with GaAs active layer

“…The ZnSe crystal was prepared by chemical vapor transport using iodine as a transport agent. 22) The residual iodine concentration was 1 × 10 18 cm −3 . The oxides on ZnSe are too thick to be removed by thermal effects alone, so wet chemical etching prior to epitaxial growth is necessary.…”

“…20,21) Recently, large ZnSe single crystals with a diameter of 30 mm and a thickness 25 mm have successfully been obtained by rotational chemical vapor transport for white LEDs. 22) The ZnSe crystal with a diameter larger than 10 mm can possibly be applied to the fabrication of transmissiontype photocathodes.…”