Yield strength and dislocation mobility in plastically deformed ZnSe

Transmission electron microscopyin situinvestigation of dislocation behaviour in semiconductors and the influence of electronic excitation

“…In that case the active layer was about 450 nm thick, and the stacking fault ribbons are very narrow (see § 4.2.3. above). Then the recombination phase is probably easier in this § This value is in good agreement with the results of a recent investigation on the strength of ZnSe by means of compressive deformation, where the activation energy for dislocation motion was estimated to be 0.5-0.7eV [30] material. Another transformation of these paired stacking faults leading to the formation of Frank stacking faults has been observed in 70 nm thick ZnS 0.04 Se 0.94 [31].…”

Robust Attenuated Total Reflection Infrared Spectroscopic Sensors Based on Quantum Cascade Lasers for Harsh Environments

“…In order to evaluate the stability of the crystal, the yield stress of ZnSe at approx. 13 MPa was implemented [26], which is orders of magnitudes higher compared to the Von Mises stress obtained in the present simulations. Therefore, the IR-ATR transducer waveguide should withstand this pressure and no damage of the crystal is anticipated.…”

“…Zinc selenide (ZnSe), a typical attenuated total reflection (ATR) waveguide material, which is used in the present infrared (IR) sensor concept shows a steep elastic increase in stress followed by a work-hardening after yielding. [26]. Mid-Infrared (MIR) spectroscopy is a non-destructive and versatile analytical method providing molecularly characteristic vibrational signatures of analytes.…”