Growth of lead zirconate titanate thin films by hybrid processing: sol–gel method and pulsed-laser deposition

Crystal structure and microstructure of lead zirconate titanate (PZT) thin films with various Zr/Ti ratios grown by hybrid processing

“…This implies that the nucleation rate of the columnar grains of the PZT film fabricated using the target with a Zr/Ti ratio of 45/55 is higher than that with a Zr/Ti ratio of 70/30. In the hybrid process, during postdeposition annealing, the grains of the perovskite phase in the layer derived by the sol-gel method grow into the layer deposited by PLD [8]. However, the solid-phase epitaxial effect between the PZT layers obtained by the sol-gel method and PLD is dependent on the chemical composition of the PZT layers.…”

“…In our previous work, we found that the temperature of postdeposition annealing in the hybrid process is lower than that in the case of direct film PLD on a Pt/Ti/SiO 2 /Si substrate and that the PZT films fabricated by the hybrid process exhibited good ferroelectric properties. In addition, the preferred orientation of the PZT films obtained by the hybrid process could be controlled using the layer deposited by the sol-gel method, because of the solid-phase epitaxial effect between the PZT layers obtained by the sol-gel method and PLD [7,8].…”

In situ deposition of epitaxial PZT films by pulsed laser deposition

“…These results indicate that the grains of the perovskite phase in the layer deposited by the sol-gel method grew in situ during PLD at the substrate temperature of 460°C. In the case of PLD at room temperature in the hybrid process, we found that the lower PZT layer deposited by the sol-gel method acted as a seed layer for the crystallization of the upper PZT layer deposited by PLD during postdeposition annealing [25]. To clarify the solid-phase epitaxial effect between the PZT layers deposited by the sol-gel method and PLD, the cross-sectional microstructure of the PZT films were studied by TEM described below.…”

Investigation on preparation and properties of Pb(Zr0.95Ti0.05)O3 thin films

“…Consequently PZT can be widely used in infrared detection [1,[7][8][9][10], such as infrared detector and thermal imaging. Precious metals such as Pt and Au are used as the electrode materials of PZT thin films [11][12][13][14]. The main advantages are the better antioxidation, lower specific resistance and greater compatibility with large scale integrated circuits (LSI).…”