Growth of Nano Crystalline Diamond on Silicon Substrate Using Different Etching Gases by HFCVD

Abstract

We investigate the effects of etching gases on the synthesis of nano crystalline diamonds grown on silicon substrate at the substrate temperature of 550 • C and the reaction pressure of 4 kPa by hot filament chemical vapor deposition method, in which CH 4 and H 2 act as a source and diluting gases, respectively. N 2 , H 2 , and NH 3 were used as the etching gases, respectively. Results show that the optimum conditions can be obtained only for the case of H 2 gas. The crystal morphology and crystallinity of the samples have been examined by scanning electron microscopy and X-ray diffraction, respectively.

Application of Nano-Crystalline Diamond in Tribology

“…Table 2 summarizes the tribological performance for NCD lubricating films. At present, there are three kinds of CVD equipment for preparing NCD films, namely hot filament CVD (HFCVD) [ 84 , 85 , 86 , 87 , 88 , 89 , 90 ], microwave plasma CVD (MPCVD) [ 91 , 92 , 93 , 94 , 95 , 96 ] and plasma enhanced CVD (PECVD) [ 97 , 98 , 99 , 100 , 101 ]. The schematic diagram of diamond film preparation is shown in Figure 4 .…”