Growth of p-type Cu-doped GaN films with magnetron sputtering at and below 400°C

Yohannes, Kidus; Kuo, Dong‐Hau

doi:10.1016/j.mssp.2014.05.010

Cited by 20 publications

(6 citation statements)

References 28 publications

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“…Though Mg has been widely used as p-dopant for GaN, the doping concentration is very low because of the formation of Mg-H complexes or defects in the doping process [24,25]. Cu has been recognized as an alternative p-type dopant, the hole concentration of Cu-doped GaN can be increased by one order of magnitude (∼10 18 cm −3 ) [26] compared with that of Mg-doped GaN (∼10 17 cm −3 ) [3]. The increased hole concentration causes the reduction of Schottky-barrier height and hence lower the contact resistance [27].…”

Section: Resultsmentioning

confidence: 99%

Annealing-induced interfacial reactions and the effects on the electrical properties of Ga doped ZnO/CuxS contacts to p-GaN

Song

et al. 2015

Applied Surface Science

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Section: Resultsmentioning

confidence: 99%

Annealing-induced interfacial reactions and the effects on the electrical properties of Ga doped ZnO/CuxS contacts to p-GaN

Song

et al. 2015

Applied Surface Science

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“…Copper also was tested as an acceptor dopant in sputtered GaN [135]. Cu-doped GaN films were deposited by rf magnetron sputtering at 100-400 °C on AlN/Si(001) templates with a single cermet target without any post-growth annealing.…”

Section: Doping Of Iii-nitrides Grown By Sputteringmentioning

confidence: 99%

Emergence of high quality sputtered III-nitride semiconductors and devices

Izyumskaya¹,

Avrutin²,

Ding³

et al. 2019

Semicond. Sci. Technol.

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This article provides an overview of recent development of sputtering method for high-quality III-nitride semiconductor materials and devices. Being a mature deposition technique widely employed in semiconductor industry, sputtering offers many advantages such as low cost, relatively simple equipment, non-toxic raw materials, low process temperatures, high deposition rates, sharp interfaces, and possibility of deposition on large-size substrates, including amorphous and flexible varieties. This review covers two major research directions: (1) ex situ sputtered AlN buffers to be used for subsequent growth of GaN-based structures by conventional techniques, such as metal-organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE), or molecular beam epitaxy (MBE), and (2) deposition of the entire III-nitride layered stacks and device structures by sputtering. Replacing conventional in situ GaN or AlN buffer layers with ex situ sputtered AlN buffers for MOCVD, HVPE, or MBE growth of IIInitride films on sapphire and silicon substrates results in the improved crystal quality through reduction in dislocation density and residual strain. Extensive efforts in the field of sputter deposition of III-nitrides resulted in crystalline quality of sputtered III-nitride films compatible with that of MOCVD and MBE grown layers despite the lower temperatures used in sputtering. For example, sputtering techniques made it possible to achieve GaN layers heavily doped with Si and Ge to electron concentrations in mid-10 20 cm −3 range with mobilities exceeding 100 cm 2 V −1 s −1 , resulting in conductivities as high as those of benchmark transparent conducting oxides such as indium tin oxide (ITO). For moderate levels of doping with Si, mobilities comparable to state-of-the-art MOCVD-grown material have been demonstrated (up to ∼1000 cm 2 V −1 s −1 ). The first promising results have been reported for devices (light emitters and field effect transistors) entirely produced by sputtering.

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“…The development and creation of p-layer GaN and InGaN materials involve one of the important technologies in designing electronic devices [1][2][3][4][5]. The investigation of high-quality doping in GaN and InGaN semiconductors by incorporating elements such as Zn, and Cu, Mg for p-GaN behavior, and its alloys had reported [4][5][6][7][8]. The success of Mg doping in forming p-In x Ga 1−x N films is an important factor for developing electric devices, a photo detector, and solar cell devices [7][8][9][10].…”

Section: Gan and Ingan Have Excellent Characteristics Such As High Comentioning

confidence: 99%

“…The investigation of high-quality doping in GaN and InGaN semiconductors by incorporating elements such as Zn, and Cu, Mg for p-GaN behavior, and its alloys had reported [4][5][6][7][8]. The success of Mg doping in forming p-In x Ga 1−x N films is an important factor for developing electric devices, a photo detector, and solar cell devices [7][8][9][10]. Si wafer has often been used for the growth of GaN, InGaN, and their alloys for applications in photo-detector, solar cells, and electronic devices.…”

Section: Gan and Ingan Have Excellent Characteristics Such As High Comentioning

confidence: 99%

Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer

et al. 2019

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The modeling of p–InxGa1−xN/n–Si hetero junction diodes without using the buffer layer were investigated with the “top-top” electrode. The p–Mg-GaN and p–Mg-In0.05Ga0.95N were deposited directly on the n–Si (100) wafer by the RF reactive sputtering at 400 °C with single cermet targets. Al and Pt with the square size of 1 mm2 were used for electrodes of p–InxGa1−xN/n–Si diodes. Both devices had been designed to prove the p-type performance of 10% Mg-doped in GaN and InGaN films. By Hall measurement at the room temperature (RT), the holes concentration and mobility were determined to be Np = 3.45 × 1016 cm−3 and µ = 145 cm2/V·s for p–GaN film, Np = 2.53 × 1017 cm−3, and µ = 45 cm2/V·s for p–InGaN film. By the I–V measurement at RT, the leakage currents at −5 V and turn-on voltages were found to be 9.31 × 10−7 A and 2.4 V for p–GaN/n–Si and 3.38 × 10−6 A and 1.5 V for p–InGaN/n–Si diode. The current densities at the forward bias of 20 V were 0.421 and 0.814 A·cm−2 for p–GaN/n–Si and p–InGaN/n–Si devices. The electrical properties were measured at the temperature range of 25 to 150 °C. By calculating based on the TE mode, Cheungs’ and Norde methods, and other parameters of diodes were also determined and compared.

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Growth of p-type Cu-doped GaN films with magnetron sputtering at and below 400°C

Cited by 20 publications

References 28 publications

Annealing-induced interfacial reactions and the effects on the electrical properties of Ga doped ZnO/CuxS contacts to p-GaN

Annealing-induced interfacial reactions and the effects on the electrical properties of Ga doped ZnO/CuxS contacts to p-GaN

Emergence of high quality sputtered III-nitride semiconductors and devices

Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer

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