Growth of p-type ZnO thin films by (N, Ga) co-doping using DMHy dopant

Abstract

We investigate p-type doping in ZnO prepared by metal-organic chemical vapour deposition with dimethylhydrazine (DMHy) as the nitrogen dopant source. Results obtained by x-ray photoelectron spectroscopy show that DMHy exhibits a narrow temperature window from 500 to 550 °C for efficient nitrogen incorporation and that nitrogen doping is critically influenced by growth conditions, e.g. the N/Ga flux ratio in growth. Within an appropriate N/Ga flux ratio range, p-type ZnO can be realized. The effect of the N/Ga flux ratio on the conductivity conversion of ZnO is reported. The extrinsic nitrogen acceptor level is calculated to be about 160 meV from low-temperature photoluminescence spectra.

Deposition and properties of B–N codoped p-type ZnO thin films by RF magnetron sputtering

“…The emission peak at 3.312 eV can be attributed to the conduction band to acceptor transition (or free electrons to the acceptor (FA) transition) as reported in In-P codoped ZnO [36]. However, the peak at 3.235 and 3.163 eV is assigned to donor-acceptor pair (DAP) transition and its longitudinal optical (LO) phonon replicas of DAP-LO with a periodic spacing of $72 meV, respectively, which is identical with the results for GaN codoped p-type ZnO [37]. Moreover, DAP emission is observed at 3.238 eV for p-type Ndoped ZnO [38].…”

Effects of (P, N) dual acceptor doping on band gap and p-type conduction behavior of ZnO films

“…28 However, the peak at 3.241 eV and 3.168 eV are assigned to donor-acceptor pair (DAP) transition and its longitudinal optical (LO) phonon replicas of DAP-LO with a periodic spacing of $72 meV, respectively. 29 Based on the literature reported previously, 30 the 3.310 and 3.241 eV peaks are often observed in N-doped ZnO with good p-type conductivity, and assigned to emissions of free electrons to N-related acceptors as well as a native donor and an N-related acceptor pair (DAP), respectively. Therefore, it is deduced that the N-related acceptor in ZnO:(P, N) film may be arise from an complex acceptor formed by (P, N) dual acceptor doping, the p-type conduction of the ZnO:(P, N) film comes from contribution of the complex acceptor.…”

A facile route to realize p-type ZnO thin films via Li–F codoping: Experiments and theory

“…It is proved that choosing appropriate acceptor dopant and doping method is very important in the preparation of p-type ZnO. Therefore, many attempts have been made, both experimentally and theoretically, to obtain p-type ZnO thin films by single doping of I or V group elements and codoping of III-V groups [5][6][7][8][9][10][11][12][13][14]. The theoretical studies demonstrated the group I elements when incorporated on Zn site, such as Li Zn , might be better p-type dopants than group V elements for introducing shallowness of acceptor levels [15].…”