2002
DOI: 10.1016/s0040-6090(01)01662-5
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Growth of PbS thin films on silicon substrate by SILAR technique

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Cited by 57 publications
(32 citation statements)
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“…Puiso et al [285,286] deposited polycrystalline cubic and a high preferred orientation along (200) plane PbS thin films on glass substrate and studied structural, morphological and optical properties. The PbS ultra thin films were stoichiometric with some oxygen and carbon impurities.…”
Section: Lead Sulphide (Pbs)mentioning
confidence: 99%
“…Puiso et al [285,286] deposited polycrystalline cubic and a high preferred orientation along (200) plane PbS thin films on glass substrate and studied structural, morphological and optical properties. The PbS ultra thin films were stoichiometric with some oxygen and carbon impurities.…”
Section: Lead Sulphide (Pbs)mentioning
confidence: 99%
“…Puiso et al [38] and Choudhury and Sarma [39] have prepared PbS thin films on Si(1 0 0) and Si(1 1 1) single crystal substrates by successive ionic layer adsorption and reaction (SILAR) and electrodeposition techniques, respectively. They [37][38][39] have obtained the similar diffraction peaks of SiC in the XRD results. The peak at 2Â = 38.3 • associates with (1 1 1) direction of Au contact [26].…”
Section: The Optical Absorption and Xrd Measurementsmentioning
confidence: 99%
“…In recent years, various techniques have been used to deposit PbS thin films including microwave-assisted chemical bath deposition (CBD) [2], successive ionic layer adsorption and reaction (SILAR) technique [14][15][16][17], atomic layer epitaxial process [18], pulse electro-deposition [19], spray pyrolysis [20] and chemical bath deposition.…”
Section: Introductionmentioning
confidence: 99%