Growth of Sb₂E₃ (E = S, Se) Polygonal Tubular Crystals via a Novel Solvent-Relief-Self-Seeding Process

Abstract

A novel solvent-relief-self-seeding (SRSS) process was applied to grow bulk polygonal tubular single crystals of Sb(2)E(3) (E = S, Se), using SbCl(3) and chalcogen elements E (E = S, Se) as the raw materials at 180 degrees C for 7 days in ethanol solution. The products were characterized by various techniques, including X-ray powder diffraction (XRD), scanning electronic microscope (SEM), transmission electronic microscope (TEM), electronic diffraction (ED), and X-ray photoelectron spectra (XPS). The calculated electrical resistivities of the tubular single crystals in the range 20-320 K were of the order of 10(5)-10(6) Omega cm for Sb(2)S(3) and 10(3)-10(4) Omega cm for Sb(2)Se(3), respectively. The studies of the optical properties revealed that the materials formed had a band gap of 1.72 eV for Sb(2)S(3) and 1.82 eV for Sb(2)Se(3), respectively. The optimal reaction conditions for the growth of bulk tubular single crystals were that the temperature was not lower than 180 degrees C and the reaction time was not shorter than 7 days. The possible growth mechanism of tubular crystals was also discussed.

DFT Study on the Carrier Concentration and Temperature-Dependent Thermoelectric Properties of Antimony Selenide

“…for bulk Sb 2 Se 3 at 300 K [3][4][5]. In order to improve its TE performance, various nanostructures of the material have At ambient conditions, Sb 2 Se 3 adopts an orthorhombic structure (U 2 S 3 -type, space group: 62.Pnma).…”

The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications

“…Sb 2 S 3 has a direct optical band gap with experimental studies reporting a range from 1.66-2.24 eV [14,32,33,34,35,36,37,38,39,40,41], which is found to increase with the film thickness and temperature [42,43]. The nature of the band gap for Sb 2 Se 3 is also unclear but an experimental range of 1.00-1.82 eV has been reported, where the lower energy transitions are considered to be indirect [44,45,46,47]. A PBE study by Vadapoo et al [48] calculated an indirect band gap of 0.88 eV for Sb 2 Se 3 ; however this is likely to be an underestimated value which is often the case when using a GGA functional like PBE.…”

Synthesis, Characterization, and Catalytic Performance of Sb2Se3 Nanorods

“…The semiconducting V 2 VI 3 compounds (Sb 2 S 3 and Sb 2 Se 3 ) are highly anisotropic semiconductors with a layered structure parallel to the growth direction with orthorhombic phase crystal structure, which is known to adopt a number of packing structures resulting in either trigonal prismatic or octahedral coordination of the metals within a layered matrix of chalcogens [1]. Semiconductor selenides find applications as laser materials, optical filters, sensors, and solar cells.…”