Growth of semi‐polar (11‐22)GaN on a (113)Si substrate by selective MOVPE

Tanikawa, Tomoyuki; Hikosaka, Toshiki; Honda, Yoshio; Yamaguchi, M.; Sawaki, Nobuhiko

doi:10.1002/pssc.200779236

Cited by 73 publications

(68 citation statements)

References 6 publications

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“…Epitaxial lateral overgrowth (ELO) is used to reduce the densities of defects. The growth of nonpolar a-plane GaN on a patterned (110) Si substrate and the growth of semipolar (11 2 2) GaN on a patterned (113) Si substrate by selective-area growth (SAG) and ELO have been reported [8,9]. We have focused on the growth of nonpolar m-plane GaN on a patterned a-plane sapphire substrate (a-PSS) using a SiO 2 mask by SAG and ELO [10].…”

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confidence: 98%

Characterization of semipolar (11$ \bar 2 $2) GaN on c ‐plane sapphire sidewall of patterned r ‐plane sapphire substrate without SiO₂ mask

Kurisu

Murakami

Abe

et al. 2010

Phys. Status Solidi (c)

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We succeeded in growing a semipolar (11$ \bar 2 $2) GaN layer on a patterned r ‐plane sapphire substrate (r ‐PSS) without a SiO2 mask by metal‐organic vapor phase epitaxy. Under various growth conditions, the semipolar (11$ \bar 2 $2) GaN layer was only grown on the c ‐plane‐like sapphire sidewall of the r ‐PSS without a SiO2 mask which shows r ‐PSS is useful to obtain (11$ \bar 2 $2) GaN. The specific characteristics of the (11$ \bar 2 $2) GaN on the r ‐PSS were investigated by X‐ray diffraction measurement, atomic force microscopy (AFM), transmission electron microscopy and photoluminescence. The full width at half maximum of X‐ray rocking curve of coalesced sample were 722 and 319 arcsec along the azimuths parallel and perpendicular to the c ‐direction, respectively. The macrosteps were observed by AFM observation. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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confidence: 98%

Characterization of semipolar (11$ \bar 2 $2) GaN on c ‐plane sapphire sidewall of patterned r ‐plane sapphire substrate without SiO₂ mask

Kurisu

Murakami

Abe

et al. 2010

Phys. Status Solidi (c)

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“…By optimizing the growth conditions, inverted triangular facet planes of GaN were formed [5,6]. The width of each GaN top surface was set to 6 µm.…”

Section: Contributed Articlementioning

confidence: 99%

“…However, the grown layer has many defects due to the lattice mismatch between the epitaxial layer and the substrate. Previously, we succeeded in growing semipolar GaN crystals on Si substrates by selective-area growth (SAG) with metal-organic vapor phase epitaxy (MOVPE) [5][6][7]. According to the microchannel epitaxy mechanism [8], the grown layer has a low defect density.…”

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confidence: 99%

Selective MOVPE growth of InGaN/GaN MQW on microfacet GaN stripes

Tanikawa

Murase

Honda

et al. 2011

Phys. Status Solidi C

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We demonstrated the effects of growth conditions such as growth pressure and growth temperature during the selective growth of InGaN/GaN multiple quantum wells (MQWs) on semipolar GaN microstripes on Si substrates. Grown layers exhibited the ridge growth, which indicates the thickness fluctuation, owing to the source supply from the apexes of the GaN microstructure. Ridge growth was suppressed by increasing growth pressure and decreasing growth temperature. Cathode luminescence (CL) analysis showed uniform luminescence. As a result, high pressure and low temperature are suitable for obtaining uniform heterostructures in the selective growth of InGaN/GaN MQWs on GaN microstripes. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Present authors succeeded in the growth of semipolar (1-101)GaN [6], (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22))GaN [7] and non-polar (11-20)GaN [8] on Si substrates. They also demonstrated semi-polar GaN LED on Si [9].…”

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confidence: 92%

HVPE growth of a ‐plane GaN on a GaN template (110)Si substrate

Tanikawa

Suzuki

Honda

et al. 2010

Phys. Status Solidi (c)

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HVPE growth of a‐plane (11‐20)GaN was demonstrated. GaN growth was initiated from template GaN stripes, and each GaN stripes coalesced to get uniform crystal. At conventional growth temperature of 1000 °C, melt back etching was observed in GaN and surface morphology was poor. By lowering growth temperature to 870 °C, this phenomenon did not occur and morphology was also improved. NH3 flow rate was not effective on the morphology. RMS value was 0.78 nm to show the stability of the formation of surface. The dark spot density was as low as 107 cm‐2. We found that most of dislocations were attributed to the coalescence of template stripes. CL spectrum showed the strong DBE peak. DAP emission and yellow luminescence were much weaker than DBE peak. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Growth of semi‐polar (11‐22)GaN on a (113)Si substrate by selective MOVPE

Cited by 73 publications

References 6 publications

Characterization of semipolar (11$ \bar 2 $2) GaN on c ‐plane sapphire sidewall of patterned r ‐plane sapphire substrate without SiO₂ mask

Characterization of semipolar (11$ \bar 2 $2) GaN on c ‐plane sapphire sidewall of patterned r ‐plane sapphire substrate without SiO₂ mask

Selective MOVPE growth of InGaN/GaN MQW on microfacet GaN stripes

HVPE growth of a ‐plane GaN on a GaN template (110)Si substrate

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Growth of semi‐polar (11‐22)GaN on a (113)Si substrate by selective MOVPE

Cited by 73 publications

References 6 publications

Characterization of semipolar (11$ \bar 2 $2) GaN on c ‐plane sapphire sidewall of patterned r ‐plane sapphire substrate without SiO2 mask

Characterization of semipolar (11$ \bar 2 $2) GaN on c ‐plane sapphire sidewall of patterned r ‐plane sapphire substrate without SiO2 mask

Selective MOVPE growth of InGaN/GaN MQW on microfacet GaN stripes

HVPE growth of a ‐plane GaN on a GaN template (110)Si substrate

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Characterization of semipolar (11$ \bar 2 $2) GaN on c ‐plane sapphire sidewall of patterned r ‐plane sapphire substrate without SiO₂ mask

Characterization of semipolar (11$ \bar 2 $2) GaN on c ‐plane sapphire sidewall of patterned r ‐plane sapphire substrate without SiO₂ mask