Growth of Semipolar InN(1013) on LaAlO₃(112) Substrate

Epitaxial growth of semipolar InN($10\bar{1}3$) on LaAlO3substrate: Epitaxial relationship analysis

“…The result indicated that semipolar ( 1013) InN layers can be grown at 510 °C with a threedimensional morphology and an electron mobility of 494 cm 2 V −1 s −1 . 23) However, a detailed study of the structure of LaAlO 3 suggests that LaAlO 3 (112) would also provide superb lattice matches to the semipolar InN( 1013) plane, with a lattice mismatch of −7.75% along the [1 210] InN direction and 0.2% along the [ 3032] InN direction. The atomic configurations of both InN( 1013) and the LaAlO 3 (112) substrate are shown in Fig.…”