1999
DOI: 10.1016/s0022-0248(98)01408-0
|View full text |Cite
|
Sign up to set email alerts
|

Growth of Si whiskers on Au/Si(111) substrate by gas source molecular beam epitaxy (MBE)

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

1
20
0

Year Published

2006
2006
2016
2016

Publication Types

Select...
6
2
1

Relationship

0
9

Authors

Journals

citations
Cited by 38 publications
(21 citation statements)
references
References 17 publications
1
20
0
Order By: Relevance
“…Alternate methods involve momentum or energy transfer such as in pulsed laser ablation [17] or molecular beam epitaxy (MBE) [18] from solid targets. Despite a range of alternatives, CVD has emerged as the most popular technique.…”
Section: Overview Of Nanowire Synthesismentioning
confidence: 99%
“…Alternate methods involve momentum or energy transfer such as in pulsed laser ablation [17] or molecular beam epitaxy (MBE) [18] from solid targets. Despite a range of alternatives, CVD has emerged as the most popular technique.…”
Section: Overview Of Nanowire Synthesismentioning
confidence: 99%
“…VLS combined with lithography allows tight control over nanoneedle diameter (down to a few nanometres), their density and their arrangement over the carrier substrate (Fan et al , 2006). Variants of the basic chemical vapour deposition (CVD) VLS principle generate the precursor gaseous Si by laser ablation (Morales, 1998), plasma generation (Hofmann et al , 2003), and molecular beam epitaxy (Liu et al , 1999). Other strategies employ Si precursor in solution (Heitsch et al , 2008;Holmes, 2000) or in solid (Wong et al , 2005) form.…”
Section: Vapour-liquid-solid (Vls) Growth Of Nanoneedlesmentioning
confidence: 99%
“…The most popular method is the CVD using gaseous sources such as silane (SiH 4 ), [73] [68] ) disilane (R 2 SiH 2 ), [74] and silicon tetrachloride (SiCl 4 ), [75] and plasma-enhanced CVD techniques. [76] In addition, evaporation of pure silicon sources by PLD, [9] by MBE [77] or by thermal evaporation [78] have also been widely practiced. The successfully proved metallic catalysts that promote VLS growth of SiNWs include Ni, Cu, Pd, Ag, Pt, Al, Ga, In, Zn, and Fe.…”
Section: Group IV Elemental Nanowiresmentioning
confidence: 99%