Growth of silicon carbide by sublimation sandwich method in the atmosphere of inert gas

Growth and structural properties of thick GaN layers obtained by sublimation sandwich method

“…However, the HVPE has some disadvantages-the use of the hydrogen chloride may introduce additional impurity in the form of chlorine. While in sublimation sandwich method (SSM) only high-purity ammonia is used as the reacting gas, this method has been applied to grow AlN [11,12], SiC [13,14] and appears to be promising for the growth of thick GaN layers [15,16] (0 0 0 1) with 3 mm GaN thin film grown by MOCVD was used as the substrate. To ensure gallium transfer, temperature gradient was employed between the gallium source and the substrate (DT ¼ 70 1C).…”

Faster Growth of 6H-SiC Single Crystals by a Physical Vapor Transport Technique with Two Crucibles

“…11 According to formulas (6)(7)(8), the pressures of these three main gases reduce with decreasing temperature, thus the crystal growth rate decreases. 14 The PVT-TC technique also enables crystal growth with a stable value of the N Si /N C ratio. At the initiate stages of the PVT technique, Si grains are added to prevent the seed from being carbonized, which results in a high pressure of Si around the seed crystal surface and increasing N Si /N C , as shown in Fig.…”

Sublimation sandwich route to ultralong zinc-blende ZnSe nanowires and the cathodoluminescence properties of individual nanowires

“…Nevertheless, these technologies are high expensive and the length of the as-synthesized nanowires is too short to be applied in nanofabrications. Sublimation sandwich method (SSM) is a modified sublimation technique which was introduced to grow singlecrystal SiC and GaN thick films [22][23][24]. The main feature of SSM is the closer distance of about several millimeters between source and substrate, which can intensify mass transport during the growth of film [25].…”