2003
DOI: 10.1021/cm0210243
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Growth of Single-Crystal Pyrite Films by Atmospheric Pressure Chemical Vapor Deposition

Abstract: Single-crystal thin films of pyrite were successfully grown by means of atmospheric pressure chemical vapor deposition (AP-CVD) using FeCl3 and CH3CSNH2 as starting materials. The pyrite films deposited onto Si(100) substrates at 673 K have smooth shinny metallic surfaces free from cracks. It was observed that the carrier concentration and Hall mobility of the films at 298 K was 5.5 × 1017cm-3 and 280 cm2/V·s, respectively. Also, the band gap and the optical absorption coefficient were 1.0 eV and 5 × 104 cm-1,… Show more

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Cited by 23 publications
(18 citation statements)
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“…Among these applications, many require the metal pyrites to be synthesized as high‐quality thin films ,. Typical thin‐film synthesis approaches include the direct sputtering and chemical vapor deposition of the targeted sulfides or via sulfurization from the corresponding metals or oxides . But these approaches generally have limitations in film quality (e.g., impurity and roughness) and process controllability.…”
Section: Figurementioning
confidence: 99%
“…Among these applications, many require the metal pyrites to be synthesized as high‐quality thin films ,. Typical thin‐film synthesis approaches include the direct sputtering and chemical vapor deposition of the targeted sulfides or via sulfurization from the corresponding metals or oxides . But these approaches generally have limitations in film quality (e.g., impurity and roughness) and process controllability.…”
Section: Figurementioning
confidence: 99%
“…Where hν is the photon energy, α is the absorption coefficient, A is constant, n =2 for an indirect allowed transition and n =1/2 for direct allowed transition. Thicker films with enlarged grain size have lower band gap values while quantum confinement effect enhances bandgap value . The pyrite absorption edge is assigned to a transition between the Fe 3d (t ag ) and e g states and temperature dependent bandgap for several semiconductors given by the empirical Varshni relation : trueE0()T=4ptE0()0-a4ptT2T+b …”
Section: Pyrite Thin Films For Photovoltaicsmentioning
confidence: 99%
“…These authors later extended their approach to grow micron‐thick pyrite epilayers on silicon (100) substrates at 400 °C. These films showed an S:Fe ratio of 1.98, n ‐type conductivity, and Hall mobilities as high as 280 cm 2 V −1 s −1 58. This remarkable epilayer result has apparently not been pursued further or reproduced by other groups.…”
Section: Introductionmentioning
confidence: 97%