2015
DOI: 10.1039/c4ce02513j
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Growth of single-crystalline nickel silicide nanowires with excellent physical properties

Abstract: High quality single-crystalline NiSi 2 , Ni 2 Si and Ni 31 Si 12 nanowire arrays coated with amorphous silicon dioxide were synthesized in high quantity by a nickel transport chemical vapor deposition (CVD) method. The morphological changes with various reaction temperatures, ambient pressures and reaction times, were observed and studied. At 750°C and 850°C, cone-shaped nanowire arrays were formed, composed of dense and oriented Ni 31 Si 12 and Ni 2 Si nanowires with lengths of over 60 μm. The growth mechanis… Show more

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Cited by 17 publications
(12 citation statements)
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“…This effect is small for YNiGe 3 but is more pronounced for heavier rare earths as in the case of LuNiGe 3 . There were some small NiSi 2 crystallites attached to the surface of the crystals (a diamagnetic nonsuperconducting metallic silicide [39][40][41]) that could be easily removed by polishing. Besides Sn (T c = 3.7 K), no other superconducting impurity was detected, so we may claim that the superconducting transitions presented below are due to these new intermetallic compounds.…”
Section: Resultsmentioning
confidence: 99%
“…This effect is small for YNiGe 3 but is more pronounced for heavier rare earths as in the case of LuNiGe 3 . There were some small NiSi 2 crystallites attached to the surface of the crystals (a diamagnetic nonsuperconducting metallic silicide [39][40][41]) that could be easily removed by polishing. Besides Sn (T c = 3.7 K), no other superconducting impurity was detected, so we may claim that the superconducting transitions presented below are due to these new intermetallic compounds.…”
Section: Resultsmentioning
confidence: 99%
“…As the dimension of CMOS devices is down to the nanoscale, metal silicide technology will be even more significant; the substrate of many photonics and microelectronics devices has been silicon. Transition-metal silicides have been studied extensively owing to their outstanding properties, including low resistivity, and great stability [ 1 5 ]. For instance, CrSi 2 , β-FeSi 2 , and MnSi are suitable as thermoelectric materials due to their narrow energy gap and great thermostability [ 6 ]; NiSi, CoSi 2 , and TiSi 2 are frequently utilized as materials of the metal gate for decreasing the resistance [ 7 ].…”
Section: Introductionmentioning
confidence: 99%
“…Transition metal silicide nanowires have been widely studied [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 ]. Fascinating materials from them with diverse features are recognized to be excellent candidates in various applications, including complementary metal-oxide semiconductor devices [ 10 , 11 ], electronics [ 12 , 13 ], photovoltaics [ 14 , 15 ], spintronics [ 16 , 17 ], field emission [ 18 , 19 , 20 ] and thermoelectrics [ 19 , 20 , 21 , 22 , 23 ].…”
Section: Introductionmentioning
confidence: 99%