Growth of single crystalline γ-Al2O3 layers on silicon by metalorganic molecular beam epitaxy

Abstract

Single crystalline γ-Al2O3 layers have been successfully grown on silicon substrates by the metalorganic molecular beam epitaxy using aluminum alkoxide gas. Single crystalline γ-Al2O3 layers are grown only on crystalline silicon substrates, while polycrystalline Al2O3 layers are grown on amorphous oxidized silicon surface. By x-ray photoemission spectroscopy measurements, the stoichiometry of the single crystalline layers were confirmed to be identical to Al2O3 bulk crystals and carbon contamination was not detected within the sensitivity of the measurements.

Surface Science Approaches for the Preparation of Alumina‐Supported Hydrotreating Catalysts

“…Several aluminum precursors have indeed been used from organometallic Al compounds to metallic Al . For example, an aluminum alkoxide (Al(sec‐OC 4 H 9 ) 3 ) was used by Lizuka et al . to synthesize an alumina thin film by metal organic molecular beam epitaxy (MOMBE) on a (1 0 0) silicium wafer.…”

Geometry of Chemical Beam Vapor Deposition System for Efficient Combinatorial Investigations of Thin Oxide Films: Deposited Film Properties versus Precursor Flow Simulations

“…Today, III–V semiconductor synthesis with CBE is mainly performed for nanowires , or quantum dot deposition. , In parallel to the main work on III–V semiconductors materials, which require a particular chemistry based mainly on alkyl compounds and hydrides, attempts were made to extend the technology to organometallic precursors for other material deposition. These included materials for Si technologies (Si, Si x Ge 1– x , FeSi 2 ), single oxides (Al 2 O 3 , CdO, CeO 2 , CuO, HfO 2 , MgO, SiO 2 , TiO 2 , Y 2 O 3 , ZnO, ZrO 2 ), binary oxides (ErSiO, LiNbO 3 , LiTaO 3 , PbTiO 3 ), and complex superconductive oxides (YBCO, La 2– x Ba x CuO 4 ). These experiments were published under the names CBE, CBD (Chemical Beam Deposition), MOMBE or HV-CVD (High-Vacuum CVD), and mostly demonstrated the availability of more or less well behaving precursors for a wide range of elements.…”

Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100)

“…Crystalline Si can be formed on Al 2 O 3 without significant reaction between the Si and Al 2 O 3 , 6 and epitaxial Al 2 O 3 films have been deposited on silicon by chemical vapor deposition ͑CVD͒ 7 and molecularbeam epitaxy ͑MBE͒. 8 A low temperature route to stable high-k/Si interfaces is desired for CMOS devices, but transmission electron microscopy ͑TEM͒ analysis of low temperature amorphous Al 2 O 3 on Si typically shows a relatively thick intermediate layer. 9 The composition of this layer has not previously been determined.…”