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Single crystalline γ-Al2O3 layers have been successfully grown on silicon substrates by the metalorganic molecular beam epitaxy using aluminum alkoxide gas. Single crystalline γ-Al2O3 layers are grown only on crystalline silicon substrates, while polycrystalline Al2O3 layers are grown on amorphous oxidized silicon surface. By x-ray photoemission spectroscopy measurements, the stoichiometry of the single crystalline layers were confirmed to be identical to Al2O3 bulk crystals and carbon contamination was not detected within the sensitivity of the measurements.

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An n-channel MOS process has been optimized to yield desirable characteristics for submicron channel length MOSFETs. Process/device simulation is extensively used to find an optimized processing sequence compatible to typical production line processes. The simulation results show an excellent agreement to experimental data.We have obtained long-channel subthreshold characteristics, saturation drain characteristics up to 5V, and minimized substrate bias effects for transistors with channel lengths as small as 0 . 5~. The short channel effects have been also minimized. A unique self-aligned silicidation technology which has been developed to reduce the increased resistance of down-scaled junctions is also presented.

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