Growth of single-phase CuInGaSe2 photo-absorbing alloy films by the selenization method using diethylselenide as a less-hazardous Se source

Preparation of Cu(In,Al)Se2 thin films by selenization using diethylselenide

“…We note that deep-level emissions assignable to carbon contamination were not observed. The results are similar to the cases of CIGS thin films grown by selenization [17][18][19][20] and CIS epilayers grown by metalorganic vapor phase epitaxy [24] using DESe. The PL result may imply that the films are suitable for the photoabsorbing layer of CIAS-based solar cells.…”

“…The authors have proposed the use of a less hazardous metalorganic selenide, diethylselenide [(C 2 H 5 ) 2 Se: DESe], for growing CIGS films by the selenization method [17][18][19][20]. Since DESe decomposes into atomic Se more easily than H 2 Se gas or Se vapor (the bond strength of Se−C 2 H 5 (243 kJ/mol) is weaker than that of H−Se (276 kJ/mol) or Se = Se (332 kJ/mol) [21,22] ), reaction rates capable for forming CIS and CGS can be expected.…”

“…The supplying rates of DESe and the flow rates of N 2 carrier gas were 35 μmol/min and 2 L/min, respectively. The details of the selenization equipment have been described in our previous reports [18][19][20].…”

Fabrication of Zn‐doped Cu(In,Ga)Se2 thin film solar cells prepared by Zn diffusion from the gas phase using dimethylzinc

“…The authors proposed the use of an organoselenide such as diethylselenide [(C 2 H 5 ) 2 Se: DESe] for selenization growth of CIGS films [11][12][13][14]. In fact, DESe is a liquid at room temperature and is stored under atmospheric pressure in a stainless-steel bubbler.…”

“…2 Experimental Single-phase polycrystalline CIS and CIGS films were prepared on Mo-coated soda-lime glass (SLG) substrates using a selenization method with DESe [11][12][13][14] or a conventional three-stage process [15]. The film thickness was approximately 2.0-3.5 µm.…”