Growth of Stacking-Faults-Free Zinc Blende GaAs Nanowires on Si Substrate by Using AlGaAs/GaAs Buffer Layers

Abstract

Vertical GaAs nanowires on Si (111) substrate were grown by metal organic chemical vapor deposition via Au-catalyst vapor-liquid-solid mechanism. Stacking-faults-free zinc blende nanowires were realized by using AlGaAs/GaAs buffer layers and growing under the optimized conditions, that the alloy droplet act as a catalyst rather than an adatom collector and its size and composition would keep stable during growth. The stable droplet contributes to the growth of stacking-faults-free nanowires. Moreover, by using the buffer layers, epitaxial growth of well-aligned NWs was not limited by the misfit strain induced critical diameter, and the unintentional doping of the GaAs nanowires with Si was reduced.

Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy

“…28 In Ref. 29, pure ZB, Gacatalyzed GaAs NWs ͑although containing two twin ZB orientations͒ has been obtained by MBE on the GaAs substrates coated with a sputtered silicon dioxide layer.…”

Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon

“…This area has gained a renewed interest, thanks to the possibility of obtaining defect-free III-V nanowires (NWs) on silicon or even germanium. [3][4][5][6][7][8][9] Although the self-organized growth of III-V NWs on silicon has been intensively studied in the last few years, [10][11][12][13][14] important issues such as those concerning the polarity mismatch between III-V NWs and the group IV substrate remain unsolved.…”

Low temperature photoluminescence and Raman phonon modes of Au-catalyzed MBE-grown GaAs–AlGaAs core–shell nanowires grown on a pre-patterned Si (111) substrate

“…Problems include lattice mismatch, thermal expansion coefficient mismatch and formation of anti-phase domains [9]. Recent works have shown that GaAs NWs can be epitaxially grown on Si substrates by controlling the nucleation of NWs through substrate etching [10] or by growing a buffer layer prior to NW growth [2,11]. Others have also shown that a highly effective way of reducing dislocation and relieving strain in the GaAs film on Si is through the use of nanoscale patterned growth [12,13].…”