2017
DOI: 10.1016/j.tsf.2017.07.074
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Growth of strained, but stable, graphene on Co

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Cited by 6 publications
(35 citation statements)
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“…According to Baraton et al, two distinct mechanisms can be considered for the graphene growth via C precipitation, the first at high temperature, which leads to large crystalline domains with low defect density, and the second at low temperature, which mainly provides nano‐crystalline graphene. Then, due to the higher heat of precipitation, graphene should grow on Co mainly by means of the first mechanism, typical of the higher T range, with enhanced coverage and encouraging electrical performances, as recently reported by Amato et al…”
Section: Introductionmentioning
confidence: 59%
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“…According to Baraton et al, two distinct mechanisms can be considered for the graphene growth via C precipitation, the first at high temperature, which leads to large crystalline domains with low defect density, and the second at low temperature, which mainly provides nano‐crystalline graphene. Then, due to the higher heat of precipitation, graphene should grow on Co mainly by means of the first mechanism, typical of the higher T range, with enhanced coverage and encouraging electrical performances, as recently reported by Amato et al…”
Section: Introductionmentioning
confidence: 59%
“…In Amato et al, it is reported about full coverage of the graphene sheet, although the Co substrate presented nearly circular discontinuities resulting from dewetting. On film discontinuities, suspended graphene was observed, whose formation was ascribed to the rapid precipitation of C onto the Co surface in the first stages of the cooling process.…”
Section: Introductionmentioning
confidence: 98%
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