Growth of strained Ga1−xInxP layers on GaP (001) by gas source molecular beam epitaxy: similarities and differences with the growth of strained arsenides

Wallart, X.; Deresmes, D.

doi:10.1016/s0022-0248(01)00693-5

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Multilayer Buffers2

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2009

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Cited by 2 publications

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“…The relaxation of compressed In x Ga 1Àx P layers grown by GSMBE on GaP and the evolution of the critical thickness for 3D growth as a function of x In has been studied in Refs. [10,11]. The transition from 2D to 3D growth occurs in the InGaP/GaP system for x In ¼ 0:2 at the H 3D critical thickness of 20 MLs.…”

Section: Multilayer Buffersmentioning

confidence: 96%

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Material properties of graded composition InxGa1−xP buffer layers grown on GaP by organometallic vapor phase epitaxy

Hasenöhrl

Novák

Vávra

et al. 2004

Journal of Crystal Growth

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Section: Multilayer Buffersmentioning

confidence: 96%

“…The layer thickness was selected with the aim to approach the critical thickness to allow the effective strain relaxation through misfit dislocations. On the contrary we wanted to avoid the 3D growth after exceeding the critical thickness for 3D growth [10,11]. The H 3D for In 0.03 Ga 0.97 P is not exactly known.…”

Section: Multilayer Buffersmentioning

confidence: 99%