Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical properties

Abstract

A study of heteroepitaxial molecular beam epitaxy growth of strained p-channel InGaSb quantum well (QW) on lattice mismatched Si (100) using Al(Ga)Sb metamorphic buffers is presented in this paper. The migration enhanced epitaxy (MEE) technique was employed for AlSb nucleation layer (NL) on Si and analyzed using atomic force microscopy and in-situ Auger electron spectroscopy techniques to optimize growth conditions for continuous 2D buffer layers and improve surface quality of subsequent layers. Growth-related defects (threading dislocations, microtwins, and antiphase boundaries) and their effect on surface morphology and electrical properties of the QWs are analyzed with scanning electron microscope and transmission electron microscopy and correlated to the NL properties. The baseline data for defect density in the layers and resultant surface morphology are presented. Room temperature p-channel Hall mobility of 660 cm 2

Development of in situ characterization techniques in molecular beam epitaxy

“…XAS, when combined with XANES, can also be used to probe oxidation states, measure oxygen vacancy concentration, and characterize nanostructures [178] . In addition, XPD can provide valuable information on the surface atomic arrangement, adsorbed molecule orientation, symmetry and distances of bonds, as demonstrated by Kilian et al in the study of atomic structure of Cr 2 O 3 /Ag (111) and Pd/Cr 2 O 3 / Ag(111) surfaces [179] .…”

Double-gated ultra-thin-body GaAs-on-insulator p-FETs on Si

“…Efforts to lessen the performance gap are tremendously important to implement future III-V CMOS technology. GaSb and In x Ga 1x Sb are expected to be very promising UTB p-III-V channel materials owing to their [25][26][27][28] Even if high-performance p-FETs can now be achieved with a GaSb channel, it is still challenging to integrate CMOS due to poor n-FET characteristics originating from the low electron mobility of GaSb.…”