Growth of Ternary WC_xN_y Thin Films from a Single‐source Precursor, W(N^tBu)₂(NEt₂)₂

Abstract

An organoimido complex of tungsten, bis(tertbutylimido)bis(diethylamido)tungsten, W(N t Bu) 2 (NEt 2 ) 2 , is used as a single source precursor to deposit thin films of cubic phase tungsten carbonitride, WC x N y (x: 0.21-0.38, y: 0.62-0.76), by metal-organic chemical vapor deposition on silicon substrates. In general, the N/W and C/W ratios decreased from 0.76 to 0.62 and 0.38 to 0.21, respectively with increasing the temperature of deposition from 500 to 650°C. Based on the elemental composition and the composition of the gas phase products, it is proposed that the carbon and nitrogen atoms were incorporated through the activation of the ligands.