Growth of the Ge overlayer on Si(100)-(2×1)

Pi, Tun‐Wen; Wu, Rong‐Tzong; Ouyang, C.-P.; Wen, J.-F.; Wertheim, G. K.

doi:10.1016/s0039-6028(00)00618-x

Cited by 9 publications

(7 citation statements)

References 25 publications

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“…10) The SCLSs of the components Ge + , S1u, S1d, and S2 become −0.633, −0.400, −0.214, and +0.093 eV, respectively. The origin of the Ge + component, shown with a negative sign for the shift, has two possibilities, either single atoms 29) or clusters. 6) In the study of Ge on Si(001)-2 × 1, Ge appears as single atoms in the initial coverage and lies in an energy position lower than the dimerized atoms developed in the later coverage.…”

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confidence: 99%

Surface electronic structure of epi germanium (001)-2 × 1

Cheng

Lin

Chen

et al. 2017

Appl. Phys. Express

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Photoemission from an epi Ge(001)-2 × 1 surface is presented using synchrotron radiation as a probe. The topmost surface atoms are buckled with the up-dimer and down-dimer atoms exhibiting surface core-level shifts (SCLSs) of −0.492 and −0.178 eV, respectively. The subsurface layer shows a +0.083 eV SCLS. The final-state effect suffices to explain the sign of the shift. The electron affinity and ionization potential for the epi Ge surface are 4.36 and 5.09 eV, respectively. An argument contrasting the current results with those of existing reports with non-epi surfaces is also given. Non-epi surfaces possess Ge surfaces with isolated single atoms or small droplets that affect Ge’s contact with dielectric layers and the electric performances of the Ge metal–oxide–semiconductor structure.

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confidence: 99%

Surface electronic structure of epi germanium (001)-2 × 1

Cheng

Lin

Chen

et al. 2017

Appl. Phys. Express

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“…[12][13][14] To date, the electronic structure of SiGe systems has been determined indirectly by investigating adsorbate systems through deposition of Ge on Si(001) (or vice versa), which were prepared in data-acquisition photoemission chambers. [15][16][17] We have investigated the electronic structure of MBE-grown Si on Ge(001) by in situ synchrotron radiation photoemission. The Ge-Ge surface dimers are removed from the epi Ge(001) during Si growth, some of which segregate to the Si top surface, and others bond with the Si in the Si film.…”

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confidence: 99%

Surface electronic structure of Si_1−xGe _x (001)-2 × 1: a synchrotron radiation photoemission study

Cheng¹,

Wan²,

Cheng³

et al. 2020

Appl. Phys. Express

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By using synchrotron radiation photoemission, this study investigates the room-temperature surface electronic structure of Si1−xGex(001)-2 × 1 grown by molecular-beam epitaxy on an epi Ge(001) substrate. The electronic structure of the Ge content, which ranges from 10% to 90%, shows similar surface behaviors. The Ge 3d core-level spectra of Si1−xGex(001)-2 × 1 are essentially the same as that of epi Ge(001)-2 × 1, terminating with tilted Ge–Ge dimers and Ge atoms in the subsurface layer. The strain effect is manifest only for the Si atoms, for which three types are revealed, namely two near the surface region and one in the bulk.

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“…The bonding probably occurs through the free dangling bonds of the silicon surface. Although theoretical calculations favor a mixed type Si‐Ge dimers, photoemission data support the initial occupation of the dangling bonds, followed by Ge dimers formation, and a final coalescence of islands or clusters . In addition, Iwawaki et al, by performing STM measurements, observed buckled Ge dimers at the very first stages of Ge growth.…”

Section: Resultsmentioning

confidence: 99%

“…Several methods of Ge growth on Si have been utilized. Among them, the most popular are the chemical vapor deposition using digermane (Ge 2 H 6 ) or simply germane GeH 4 as Ge precursor, the molecular beam epitaxy and the physical vapor deposition …”

Section: Introductionmentioning

confidence: 99%

Ultrathin films of Ge on the Si(100)2 × 1 surface

Kamaratos

Sotiropoulos

Vlachos

2017

Surface & Interface Analysis

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The Ge/Si(100)2 × 1 interface was investigated by means of Auger electron spectroscopy, lowenergy electron diffraction, thermal desorption spectroscopy, and work function measurements, in the regime of a few monolayers. The results show that growth of Ge at room temperature forms a thermally stable amorphous interface without significant intermixing and interdiffusion into the substrate, for annealing up to~1100 K. Therefore, the Ge-Si interaction most likely takes place at the outmost silicon atomic plane. The charge transfer between Ge and Si seems to be negligible, indicating a rather covalent bonding. Regarding the Ge overlayer morphology, the growth mode depends on the substrate temperature during deposition, in accordance with the literature. Stronger annealing of the germanium covered substrate (>1100 K) causes desorption of not only Ge adatoms, but also SiGe and Ge 2 species. This is probably due to a thermal Ge-Si interdiffusion. In that case, deeper silicon planes participate in the Ge-Si interaction. Above 1200 K, a new Ge superstructure (4 × 4)R45 o was observed. Based on that symmetry, an atomic model is proposed, where Ge adatom pairs interact with free silicon dangling bonds.

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Growth of the Ge overlayer on Si(100)-(2×1)

Cited by 9 publications

References 25 publications

Surface electronic structure of epi germanium (001)-2 × 1

Surface electronic structure of epi germanium (001)-2 × 1

Surface electronic structure of Si_1−xGe _x (001)-2 × 1: a synchrotron radiation photoemission study

Ultrathin films of Ge on the Si(100)2 × 1 surface

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Growth of the Ge overlayer on Si(100)-(2×1)

Cited by 9 publications

References 25 publications

Surface electronic structure of epi germanium (001)-2 × 1

Surface electronic structure of epi germanium (001)-2 × 1

Surface electronic structure of Si1−x Ge x (001)-2 × 1: a synchrotron radiation photoemission study

Ultrathin films of Ge on the Si(100)2 × 1 surface

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Product

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Surface electronic structure of Si_1−xGe _x (001)-2 × 1: a synchrotron radiation photoemission study