Growth of thick InGaN films with entire alloy composition using droplet elimination by radical-beam irradiation

Yamaguchi, Tomohiro; Uematsu, Nao; Araki, Tsutomu; Honda, Toshio; Yoon, Euijoon; Nanishi, Yasushi

doi:10.1016/j.jcrysgro.2013.05.009

Cited by 28 publications

(24 citation statements)

References 19 publications

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“…In order to take advantage of both metal-rich and N-rich conditions, several modulated growth methods have been studied [10,11]. Metal-modulated epitaxy (MME), a growth technique that uses constant N flux, shuttered Ga and In fluxes under metal-rich conditions, and extremely low substrate temperatures (400-450°C), has enabled the growth of InGaN films throughout the miscibility gap [12,13].…”

Section: Introductionmentioning

confidence: 99%

Low-temperature growth of InGaN films over the entire composition range by MBE

Fabien¹,

Doolittle²,

Fischer³

et al. 2015

Journal of Crystal Growth

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The surface morphology, microstructural, and optical properties of indium gallium nitride (InGaN) films grown by plasma-assisted molecular beam epitaxy under low growth temperatures and slightly nitrogen-rich growth conditions are studied. The single-phase InGaN films exhibit improved defect density, an absence of stacking faults, efficient In incorporation, enhanced optical properties, but a grainlike morphology. With increasing In content, we observe an increase in the degree of relaxation and a complete misfit strain relaxation through the formation of a uniform array of misfit dislocation at the InGaN/GaN interface for InGaN films with indium contents higher than 55-60%.

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Section: Introductionmentioning

confidence: 99%

Low-temperature growth of InGaN films over the entire composition range by MBE

Fabien¹,

Doolittle²,

Fischer³

et al. 2015

Journal of Crystal Growth

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“…Gacevic et al 6 presented a growth diagram of InGaN with In content up to 50% and identified an intermediate metal rich regime, with 1À2 monolayer (ML) thick In coverage, which provided best InGaN quality in terms of surface morphology. On the other hand, Yamaguchi et al 7 showed the growth of thick and uniform In x Ga 1-x N films with the entire alloy composition range (0.2 x 1) using the droplet elimination radical-beam irradiation method. In this method, the impinging Ga and N fluxes remain constant, and the In flux is modulated, alternating growth under In excess and interruptions of the In flux to consume the excess accumulated on the surface.…”

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confidence: 99%

High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics

Valdueza-Felip

Bellet-Amalric

Núñez-Cascajero

et al. 2014

Journal of Applied Physics

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We report the interplay between In incorporation and strain relaxation kinetics in high-In-content In x Ga 1-x N (x ¼ 0.3) layers grown by plasma-assisted molecular-beam epitaxy. For In mole fractions x ¼ 0.13-0.48, best structural and morphological qualities are obtained under In excess conditions, at In accumulation limit, and at a growth temperature where InGaN decomposition is active. Under such conditions, in situ and ex situ analyses of the evolution of the crystalline structure with the layer thickness point to an onset of misfit relaxation after the growth of 40 nm, and a gradual relaxation during more than 200 nm, which results in an inhomogeneous strain distribution along the growth axis. This process is associated with a compositional pulling effect, i.e., indium incorporation is partially inhibited in presence of compressive strain, resulting in a compositional gradient with increasing In mole fraction towards the surface. V C 2014 AIP Publishing LLC.

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“…For the growth of the InGaN layers, the Ga flux was varied between 4.5 10 14 and 6. . All the InGaN layers described in this study were grown using the advanced-DERI method [11] and [12] at a substrate temperature of 550 ºC.…”

Section: Methodsmentioning

confidence: 99%

Effect of different buffer layers on the quality of InGaN layers grown on Si

Gómez¹,

Grandal

Núñez-Cascajero

et al. 2018

AIP Advances

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This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical conduction of n-InGaN/buffer-layer/p-Si heterostructures, with In composition near 46%, which theoretically produces an alignment of the bands, is analyzed. Droplet elimination by radical-beam irradiation was successfully applied to grow high quality InGaN films on Si substrates for the first time. Among several buffer choices, an AlN buffer layer with a thickness above 24 nm improves the structural and optical quality of the InGaN epilayer while keeping a top to bottom ohmic behavior. These results will allow fabricating double-junction InGaN/Si solar cells without the need of tunnel junctions between the two sub-cells, therefore simplifying the device design. _____________________________ a)

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Growth of thick InGaN films with entire alloy composition using droplet elimination by radical-beam irradiation

Cited by 28 publications

References 19 publications

Low-temperature growth of InGaN films over the entire composition range by MBE

Low-temperature growth of InGaN films over the entire composition range by MBE

High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics

Effect of different buffer layers on the quality of InGaN layers grown on Si

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